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IRFR13N20D价格
参考价格：￥2.8364
型号：IRFR13N20DPBF 品牌：IR 备注：这里有IRFR13N20D多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR13N20D批发/采购报价，IRFR13N20D行情走势销售排行榜，IRFR13N20D报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR13N20D | Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF |   | |
IRFR13N20D | N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR13N20D | SMPS MOSFET 文件：3.72818 Mbytes Page：10 Pages | KERSEMI | | |
IRFR13N20D | 200V 单个 N 通道 HEXFET Power MOSFET, 采用 D-Pak 封装 | Infineon 英飞凌 | | |
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A ) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free | IRF | | ||
SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free | KERSEMI | | ||
High frequency DC-DC converters 文件：689.89 Kbytes Page：11 Pages | IRF | | ||
HIGH FREQUENCY DC-DC CONVERTERS 文件：689.89 Kbytes Page：11 Pages | IRF | | ||
HIGH FREQUENCY DC-DC CONVERTERS 文件：689.89 Kbytes Page：11 Pages | IRF | | ||
High frequency DC-DC converters 文件：689.89 Kbytes Page：11 Pages | IRF | | ||
High frequency DC-DC converters 文件：231.09 Kbytes Page：11 Pages | IRF | | ||
N-Channel 200 V (D-S) MOSFET 文件：1.77733 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFR13N20D产品属性
- 类型
描述
- 型号
IRFR13N20D
- 制造商
International Rectifier
- 功能描述
Trans MOSFET N-CH 200V 13A 3-Pin(2+Tab) DPAK
- 制造商
International Rectifier
- 功能描述
MOSFET N D-PAK
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-252 |
21350 |
原装正品，实单请联系 |
|||
IR/国际整流器 |
21+ |
TO-252-2 |
10000 |
只做原装,质量保证 |
|||
INFINEON/英飞凌 |
22+ |
TO-252 |
12500 |
原装正品支持实单 |
|||
IR |
25+ |
TO-252 |
467 |
全新原装正品支持含税 |
|||
IR |
24+ |
TO-252 |
80000 |
只做自己库存 全新原装进口正品假一赔百 可开13%增 |
|||
IR |
2023+ |
TO-252 |
12000 |
全新原装正品,优势价格 |
|||
INFINEON/英飞凌 |
25+ |
TO-252 |
54648 |
百分百原装现货 实单必成 欢迎询价 |
|||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
TO-252 |
8964 |
只做原装假一赔十 |
IRFR13N20D规格书下载地址
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IRFR13N20D数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
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联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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