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IRFR13N20DPBF价格
参考价格：￥2.8364
型号：IRFR13N20DPBF 品牌：IR 备注：这里有IRFR13N20DPBF多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR13N20DPBF批发/采购报价，IRFR13N20DPBF行情走势销售排行榜，IRFR13N20DPBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR13N20DPBF | SMPS MOSFET ( VDSS=200V , RDS(on)max=0.235廓 , ID=13A ) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free | IRF |   | |
IRFR13N20DPBF | SMPS MOSFET Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters • Lead-Free | KERSEMI | | |
IRFR13N20DPBF | HIGH FREQUENCY DC-DC CONVERTERS 文件：689.89 Kbytes Page：11 Pages | IRF | | |
IRFR13N20DPBF | High frequency DC-DC converters 文件：689.89 Kbytes Page：11 Pages | IRF | | |
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
HIGH FREQUENCY DC-DC CONVERTERS 文件：689.89 Kbytes Page：11 Pages | IRF | | ||
Power MOSFET(Vdss=200V, Rds(on)max=0.235ohm, Id=13A) Benefits • Low Gate to Drain Charge to Reduce Switching Losses • Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) • Fully Characterized Avalanche Voltage and Current Applications • High frequency DC-DC converters | IRF | | ||
SMPS MOSFET 文件：3.72818 Mbytes Page：10 Pages | KERSEMI | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel MOSFET Transistor 文件：335.82 Kbytes Page：2 Pages | ISC 无锡固电 | |
IRFR13N20DPBF产品属性
- 类型
描述
- 型号
IRFR13N20DPBF
- 功能描述
MOSFET 200V 1 N-CH HEXFET 235mOhms 25nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
TO-252 |
21350 |
原装正品，实单请联系 |
|||
IR |
24+ |
TO-252 |
65200 |
一级代理/放心采购 |
|||
IR |
25+ |
TO-252 |
65248 |
百分百原装现货 实单必成 |
|||
INFINEON/英飞凌 |
2022+ |
5000 |
只做原装,价格优惠,长期供货。 |
||||
Infineon(英飞凌) |
24+ |
TO-252 |
7793 |
支持大陆交货,美金交易。原装现货库存。 |
|||
Infineon Technologies |
23+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原装正品，支持实单 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
VBsemi(台湾微碧) |
2447 |
TO-252 |
105000 |
2500个/圆盘一级代理专营品牌!原装正品,优势现货, |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRFR13N20DPBF规格书下载地址
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IRFR13N20DPBF数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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