位置：首页 > IC中文资料第2630页 > IRFR110
IRFR110价格
参考价格：￥1.4470
型号：IRFR110PBF 品牌：VISHAY 备注：这里有IRFR110多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR110批发/采购报价，IRFR110行情走势销售排行榜，IRFR110报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR110 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use | INTERSIL |   | |
IRFR110 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR110 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR110 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR110 | Power MOSFET Dynamic dV/dt rating\nRepetitive avalanche rated\nSurface-mount (IRFR110, SiHFR110); | VISHAYVishay Siliconix 威世威世科技公司 | | |
IRFR110 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
IRFR110 | isc N-Channel MOSFET Transistor 文件：321.33 Kbytes Page：2 Pages | ISC 无锡固电 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.) | FAIRCHILD 仙童半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | BYCHIP 百域芯 | | ||
HEXFET짰Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni | IRF | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
isc N-Channel MOSFET Transistor 文件：373.66 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Power MOSFET | ONSEMI 安森美半导体 | | ||
Advanced Power MOSFET 文件：257.57 Kbytes Page：7 Pages | FAIRCHILD 仙童半导体 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 100 V (D-S) MOSFET 文件：979.63 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V) Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS | MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V) ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS | MOSPEC 统懋 | |
IRFR110产品属性
- 类型
描述
- 型号
IRFR110
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
SAMSUNG |
26+ |
TO-252 |
360000 |
原装现货 |
|||
IOR |
25+23+ |
SO-252 |
39197 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
2025+ |
TO252 |
941 |
原装进口价格优 请找坤融电子! |
|||
IR |
24+ |
TO-252 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
TI |
25+ |
- |
7786 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
IR |
25+ |
原厂封装 |
78900000 |
原厂直接发货进口原装 |
|||
VISHAY/威世 |
25+ |
TO-252 |
5715 |
只做原装 有挂有货 假一罚十 |
|||
VBSEMI |
19+ |
TO252D-PAK |
15000 |
||||
VISHAY |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
IRFR110芯片相关品牌
IRFR110规格书下载地址
IRFR110参数引脚图相关
- l101
- l100
- ku波段
- kt250
- kse13005
- ks20
- km710
- ka5q1265rf
- k9f1208
- k310
- k2698
- k233
- k2055
- k2010
- jumper
- jtag接口
- jk触发器
- j111
- j108
- isd1420
- IRFS530
- IRFS510
- IRFS450
- IRFS250
- IRFRC20
- IRFR825
- IRFR812
- IRFR48Z
- IRFR420
- IRFR410
- IRFR330
- IRFR325
- IRFR320
- IRFR310
- IRFR230
- IRFR224
- IRFR220
- IRFR214
- IRFR210
- IRFR13N15DTRPBF
- IRFR13N15DPBF
- IRFR120ZTRPBF
- IRFR120ZTRLPBF
- IRFR120ZPBF
- IRFR120TRPBF-CUTTAPE
- IRFR120TRPBF
- IRFR120PBF
- IRFR120NTRPBF
- IRFR120NTRLPBF-CUTTAPE
- IRFR120NTRLPBF
- IRFR120NPBF
- IRFR1205TRPBF
- IRFR1205TRLPBF
- IRFR1205PBF
- IRFR120
- IRFR110TRPBF-CUTTAPE
- IRFR110TRPBF
- IRFR110TRLPBF
- IRFR110PBF
- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR024
- IRFR020TRPBF
- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
- IRFR010
- IRFQ110
- IRFPS43N50KPBF
- IRFPS40N60KPBF
- IRFPS40N50LPBF
- IRFPS38N60LPBF
- IRFPS3810PBF
- IRFPG50
- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
IRFR110数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
2022-10-19IRFP4668PBF 全新原装现货
IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
- P106
- P107
- P108
- P109
