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IRFR110价格
参考价格：￥1.4470
型号：IRFR110PBF 品牌：VISHAY 备注：这里有IRFR110多少钱，2025年最近7天走势，今日出价，今日竞价，IRFR110批发/采购报价，IRFR110行情走势销售排行榜，IRFR110报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR110 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use | Intersil |   | |
IRFR110 | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR110 | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR110 | Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VishayVishay Siliconix 威世威世科技公司 | | |
IRFR110 | isc N-Channel MOSFET Transistor 文件：321.33 Kbytes Page：2 Pages | ISC 无锡固电 | | |
IRFR110 | 4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs | RENESAS 瑞萨 | | |
IRFR110 | Power MOSFET | VishayVishay Siliconix 威世威世科技公司 | | |
Power MOSFET FEATURES • Dynamic dV/dt rating • Repetitive avalanche rated • Surface-mount (IRFR110, SiHFR110) • Available in tape and reel • Fast switching • Ease of paralleling • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 DESCRIPTION Third generation | VishayVishay Siliconix 威世威世科技公司 | | ||
Advanced Power MOSFET FEATURES ■ Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 μA (Max.) @ VDS = 100V ■ Lower RDS(ON) : 0.289 Ω(Typ.) | Fairchild 仙童半导体 | | ||
N-channel Enhancement Mode Power MOSFET Features VDS= 100V, ID= 18.1 A RDS(ON) | Bychip 百域芯 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | ||
HEXFET짰Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni | IRF | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 | | ||
Advanced Power MOSFET | ONSEMI 安森美半导体 | | ||
isc N-Channel MOSFET Transistor 文件：373.66 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
Advanced Power MOSFET 文件：257.57 Kbytes Page：7 Pages | Fairchild 仙童半导体 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
N-Channel 100 V (D-S) MOSFET 文件：979.63 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VishayVishay Siliconix 威世威世科技公司 | | ||
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | | ||
Commercial 3/4inch (19mm) Diameter, 1 1/2 and 2 watt Wirewound Variable Resistor 文件：957.05 Kbytes Page：3 Pages | CTS 西迪斯 | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
PC board mounting and direct insert mounting available 文件：1.60394 Mbytes Page：3 Pages | HUAXINAN 华兴安 | | ||
3 Phase Hi-Torque DC Brushless Motor 文件：125.59 Kbytes Page：1 Pages | MOTIONKING | |
IRFR110产品属性
- 类型
描述
- 型号
IRFR110
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR/VISHAY |
22+ |
SOT252 |
100000 |
代理渠道/只做原装/可含税 |
|||
FAIRCHILD/仙童 |
24+ |
TO 252 |
155816 |
明嘉莱只做原装正品现货 |
|||
IR |
25+ |
TO-252 |
35681 |
IR全新特价IRFR110TRPBF即刻询购立享优惠#长期有货 |
|||
VISHAY/威世 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
24+ |
N/A |
10000 |
只做原装,实单最低价支持 |
|||
IR |
TO-252 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IOR |
25+23+ |
SO-252 |
39197 |
绝对原装正品全新进口深圳现货 |
|||
IR |
24+ |
TO-252 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
IR |
24+ |
TO-252 |
15800 |
绝对原装现货,价格低,欢迎询购! |
IRFR110规格书下载地址
IRFR110参数引脚图相关
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- IRFR120TRPBF-CUTTAPE
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- IRFR120PBF
- IRFR120NTRPBF
- IRFR120NTRLPBF-CUTTAPE
- IRFR120NTRLPBF
- IRFR120NPBF
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- IRFR1205TRLPBF
- IRFR1205PBF
- IRFR120
- IRFR110TRPBF-CUTTAPE
- IRFR110TRPBF
- IRFR110TRLPBF
- IRFR110PBF
- IRFR1018ETRPBF
- IRFR1018EPBF
- IRFR1010ZPBF
- IRFR024TRPBF-CUTTAPE
- IRFR024TRPBF
- IRFR024PBF
- IRFR024NTRPBF-CUTTAPE
- IRFR024NTRPBF
- IRFR024NTRLPBF
- IRFR024NPBF
- IRFR024
- IRFR020TRPBF
- IRFR020PBF
- IRFR020
- IRFR014TRPBF
- IRFR014PBF
- IRFR014
- IRFR012
- IRFR010PBF
- IRFR010
- IRFQ110
- IRFPS43N50KPBF
- IRFPS40N60KPBF
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- IRFPG40
- IRFPG30
- IRFPF50
- IRFPF40
- IRFPF30
- IRFPE50
- IRFPE40
- IRFPE30
- IRFPC60
- IRFPC50
- IRFPC48
- IRFPC40
- IRFPC30
IRFR110数据表相关新闻
IRFR15N20DTRPBF
表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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IRFP4668PBF
2022-6-27IRFR13N20DTRPBF
联系人张生 电话19926428992 QQ1924037095
2021-10-12IRFR13N20DTRPBF
属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
2021-10-12IRFP460PBF
IRFP460PBF
2021-5-20IRFP460PBF 原装正品 现货供应
IRFP460PBF 原装现货供应 0755-28892389 13713856319 QQ:2639752116
2021-3-12
DdatasheetPDF页码索引
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