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| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR110TRRPBF | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VishayVishay Siliconix 威世威世科技公司 |   | |
IRFR110TRRPBF | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
1.3 Watts Axial Leaded Zener Diodes VOLTAGE RANGE: 2.4 - 200V POWER: 1.3Wa t t s Features ● Complete Voltage Range 2.4 to 200 Volts ● High peak reverse power dissipation ● High reliability ● Low leakage current | SUNMATE 森美特 | | ||
Commercial 3/4inch (19mm) Diameter, 1 1/2 and 2 watt Wirewound Variable Resistor 文件：957.05 Kbytes Page：3 Pages | CTS 西迪斯 | | ||
Premier Supplier of Electronic Hardware 文件：5.0379 Mbytes Page：60 Pages | ABBATRON | | ||
PC board mounting and direct insert mounting available 文件：1.60394 Mbytes Page：3 Pages | HUAXINAN 华兴安 | | ||
3 Phase Hi-Torque DC Brushless Motor 文件：125.59 Kbytes Page：1 Pages | MOTIONKING | |
IRFR110TRRPBF产品属性
- 类型
描述
- 型号
IRFR110TRRPBF
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
19 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
20+ |
TO-252 |
38560 |
原装优势主营型号-可开原型号增税票 |
|||
IR |
0848+ |
TO-252 |
19 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
IR |
24+ |
TO-252 |
7500 |
新进库存/原装 |
|||
IR |
06+ |
TO-252 |
15000 |
原装库存 |
|||
IR/进口原 |
17+ |
TO-252 |
6200 |
||||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VISHAY |
23+ |
TO-252 |
7000 |
||||
Vishay |
25+ |
DPAK |
12300 |
独立分销商 公司只做原装 诚心经营 免费试样正品保证 |
|||
IR |
23+ |
TO-252 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRFR110TRRPBF芯片相关品牌
IRFR110TRRPBF规格书下载地址
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IRFR110TRRPBF数据表相关新闻
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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DdatasheetPDF页码索引
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