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IRFR110TR价格
参考价格：￥1.7173
型号：IRFR110TRLPBF 品牌：Vishay 备注：这里有IRFR110TR多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR110TR批发/采购报价，IRFR110TR行情走势销售排行榜，IRFR110TR报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR110TR | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFR110TR | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
N-Channel 100 V (D-S) MOSFET 文件：979.63 Kbytes Page：7 Pages | VBSEMI 微碧半导体 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V) Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS | MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V) ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS | MOSPEC 统懋 | |
IRFR110TR产品属性
- 类型
描述
- 型号
IRFR110TR
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+/25+ |
2000 |
原装正品现货库存价优 |
||||
VISHAY/威世 |
2450+ |
TO-252 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
24+ |
TO-252 |
9800 |
一级代理/全新原装现货/长期供应! |
|||
VISHAY/威世 |
23+ |
ThroughHole |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
INTREC |
23+ |
NA |
2486 |
专做原装正品,假一罚百! |
|||
IOR |
25+23+ |
SO-252 |
39197 |
绝对原装正品全新进口深圳现货 |
|||
VISHAY/威世 |
2025+ |
TO252 |
941 |
原装进口价格优 请找坤融电子! |
|||
IR |
24+ |
SOT-223 |
59 |
||||
IR |
23+ |
65480 |
|||||
INR |
23+ |
TO-3 |
44353 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
IRFR110TR规格书下载地址
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IRFR110TR数据表相关新闻
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2021-3-12
DdatasheetPDF页码索引
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