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IRFR110PBF价格
参考价格：￥1.4470
型号：IRFR110PBF 品牌：VISHAY 备注：这里有IRFR110PBF多少钱，2026年最近7天走势，今日出价，今日竞价，IRFR110PBF批发/采购报价，IRFR110PBF行情走势销售排行榜，IRFR110PBF报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFR110PBF | Power MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. Power | VISHAYVishay Siliconix 威世威世科技公司 |   | |
IRFR110PBF | HEXFET짰Power MOSFET DESCRIPTION Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The D-Pak is designed for surface mounting using vapor phase, infrared, or wave soldering techni | IRF | | |
IRFR110PBF | Dynamic dV/dt Rating Repetitive Avalanche Rated DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The st | KERSEMI | | |
IRFR110PBF | HEXFET®Power MOSFET | INFINEON 英飞凌 | | |
IRFR110PBF | Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | |
Power MOSFET 文件：782.87 Kbytes Page：13 Pages | VISHAYVishay Siliconix 威世威世科技公司 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V)
| MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V) Surface Mount Schottky Barrier Rectifiers SCHOTTKY BARRIER RECTIFIERS 1.0 AMPERES 70 -100 VOLTS | MOSPEC 统懋 | | ||
SCHOTTKY BARRIER RECTIFIERS(1.0A,70-100V)
| MOSPEC 统懋 | | ||
POWER RECTIFIERS(1.0A,500-1000V) ULTRAFAST POWER RECTIFIERS 1.0 AMPERES 500 -- 1000 VOLTS | MOSPEC 统懋 | |
IRFR110PBF产品属性
- 类型
描述
- 型号
IRFR110PBF
- 功能描述
MOSFET N-Chan 100V 4.3 Amp
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VISHAY/威世 |
2511 |
TO-252 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
IR |
25+ |
TO-252 |
32360 |
IR全新特价IRFR110PBF即刻询购立享优惠#长期有货 |
|||
Vishay |
24+ |
NA |
3001 |
进口原装正品优势供应 |
|||
VISHAY/威世 |
10+ |
TO-252 |
209 |
||||
IR |
新年份 |
TO-252 |
67430 |
一级代理原装正品现货,支持实单! |
|||
VISHAY/威世 |
24+ |
TO-252 |
9000 |
只做原装，欢迎询价，量大价优 |
|||
VBSEMI |
20+ |
TO-252AA |
5125 |
全新 发货1-2天 |
|||
IR |
17+ |
TO-252 |
6200 |
||||
Vishay Siliconix |
22+ |
TO2523 DPak (2 Leads + Tab) SC |
9000 |
原厂渠道,现货配单 |
|||
VISHAY/威世 |
23+ |
TO-252 |
7000 |
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IRFR110PBF规格书下载地址
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IRFR110PBF数据表相关新闻
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表面贴装型 N 通道 200 V 17A（Tc） 3W（Ta），140W（Tc） D-PAK（TO-252AA）
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属性 参数值 商品目录 场效应管(MOSFET) 漏源电压(Vdss) 200V 连续漏极电流(Id) 13A 功率(Pd) 110W 导通电阻(RDS(on)@Vgs，Id) 235mΩ 10V，8A 阈值电压(Vgs(th)@Id) 5.5V 250μA 类型 N沟道
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2021-3-12
DdatasheetPDF页码索引
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