4.7A, 100V, 0.540 Ohm, N-Channel Power MOSFETs

These are N-Channel enhancement mode silicon gate power field effect transistors designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These advanced power MOSFETs are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. These transistors can be operated directly from integrated circuits.

Features

• 4.7A, 100V

• rDS(ON) = 0.540Ω

• Single Pulse Avalanche Energy Rated

• SOA is Power Dissipation Limited

• Nanosecond Switching Speeds

• Linear Transfer Characteristics

• High Input Impedance

• 175°C Operating Temperature

• Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”