Power MOSFET(Vdss=60V, Rds(on)=0.042ohm, Id=21A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

HEXFET POWER MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co

Power MOSFET

FEATURES • Isolated package • High voltage isolation = 2.5 kVRMS (t = 60 s; f = 60 Hz) • Sink to lead creepage distance = 4.8 mm • 175 °C operating temperature • Dynamic dV/dt rating • Low thermal resistance • Material categorization: for definitions of compliance please see www.vishay.co

Power MOSFET

DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applica

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)

Through-Hole Packags TO-220 FullPak (Fully Isolated)

HEXFET짰 Power MOSFET

Coming Soon. If you have some information on related parts, please share useful information by adding links below.

Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A)

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

Advanced Process Technology

Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr

isc N-Channel MOSFET Transistor

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iscN-Channel MOSFET Transistor

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Isc N-Channel MOSFET Transistor

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采用 TO-220 FullPak 封装的 55V 单 N 通道功率 MOSFET

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