位置：首页 > IC中文资料第1424页 > IRFIZ34V
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRFIZ34V | Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF |   | |
IRFIZ34V | Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A) | Infineon 英飞凌 | | |
Advanced Process Technology Description Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, pr | IRF | |
IRFIZ34V产品属性
- 类型
描述
- 型号
IRFIZ34V
- 制造商
International Rectifier
- 功能描述
MOSFET Transistor, N-Channel, TO-220AB(FP)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
1310 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IR |
23+ |
TO-220FullPak( |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
21+ |
TO-220 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
24+ |
TO-220FullPak(Iso) |
8866 |
||||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
|||
INFINEON/IR |
2023+ |
TO-220F |
1675 |
一级代理优势现货,全新正品直营店 |
|||
IR |
TO-220F |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IR |
23+ |
TO-220F |
7300 |
专注配单,只做原装进口现货 |
|||
IR |
23+ |
TO-220F |
7000 |
||||
IR |
1923+ |
TO-220 |
5000 |
正品原装品质假一赔十 |
IRFIZ34V规格书下载地址
IRFIZ34V参数引脚图相关
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- jumper
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- isd1420
- IRFM350
- IRFM340
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2019-3-7
DdatasheetPDF页码索引
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