位置:IRFIZ34V > IRFIZ34V详情

IRFIZ34V中文资料

厂家型号

IRFIZ34V

文件大小

105.39Kbytes

页面数量

8

功能描述

Power MOSFET(Vdss=60V, Rds(on)=28mohm, Id=20A)

MOSFET Transistor, N-Channel, TO-220AB(FP)

数据手册

下载地址一下载地址二到原厂下载

生产厂商

IRF

IRFIZ34V数据手册规格书PDF详情

Description

Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.

● Advanced Process Technology

● Ultra Low On-Resistance

● Dynamic dv/dt Rating

● 175°C Operating Temperature

● Fast Switching

● Fully Avalanche Rated

● Optimized for SMPS Applications

IRFIZ34V产品属性

  • 类型

    描述

  • 型号

    IRFIZ34V

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET Transistor, N-Channel, TO-220AB(FP)

更新时间:2025-10-6 9:03:00
供应商 型号 品牌 批号 封装 库存 备注 价格
IR
2015+
TO-220F
12500
全新原装,现货库存长期供应
IR
05+
原厂原装
2101
只做全新原装真实现货供应
IR
24+
TO-220FullPak(Iso)
8866
IR
23+
TO-220F
11846
一级代理商现货批发,原装正品,假一罚十
IR
23+
TO-220F
50000
全新原装正品现货,支持订货
IR
21+
TO-220F
10000
原装现货假一罚十
IR
2022+
TO-220F
12888
原厂代理 终端免费提供样品
IR
23+
TO-220FullPak(
10000
原厂授权一级代理,专业海外优势订货,价格优势、品种
IR/VISHAY
23+
TO-220F
6000
原装正品,支持实单
IR
TO-220F
68500
一级代理 原装正品假一罚十价格优势长期供货