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IRFIZ34VPBF中文资料
IRFIZ34VPBF数据手册规格书PDF详情
Description
Advanced HEXFET®Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for additional insulating hardware in commercial-industrial applications. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The Fullpak is mounted to a heatsink using a single clip or by a single screw fixing.
● Advanced Process Technology
● Ultra Low On-Resistance
● Dynamic dv/dt Rating
● 175°C Operating Temperature
● Fast Switching
● Fully Avalanche Rated
● Optimized for SMPS Applications
● Lead-Free
IRFIZ34VPBF产品属性
- 类型
描述
- 型号
IRFIZ34VPBF
- 制造商
International Rectifier
- 功能描述
MOSFET N 60V 20A TO-220FP
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
IR |
24+ |
TO-220-3 |
162 |
||||
IR |
17+ |
TO-220 |
6200 |
100%原装正品现货 |
|||
IR |
21+ |
TO-220 |
30000 |
百域芯优势 实单必成 可开13点增值税 |
|||
IR |
1923+ |
TO-220 |
5000 |
正品原装品质假一赔十 |
|||
VBSEMI/台湾微碧 |
23+ |
TO-220FP |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
21+ |
TO-220 |
10000 |
原装现货假一罚十 |
|||
IR |
22+ |
TO-220 |
6000 |
十年配单,只做原装 |
|||
I |
23+ |
TO-220FP |
6000 |
原装正品,支持实单 |
|||
INFINEON/IR |
2023+ |
TO-220F |
1675 |
一级代理优势现货,全新正品直营店 |
|||
IR |
23+ |
TO-220 |
8000 |
只做原装现货 |
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