位置：首页 > IC中文资料第2126页 > IRF6691TR
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HEXFET Power MOSFET plus Schottky Diode HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile ( | IRF |   | ||
HEXFET Power MOSFET plus Schottky Diode HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile ( | IRF | | ||
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
DirectFETPower MOSFET Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
DirectFETPower MOSFET Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
System DC Power Supply 文件：318.82 Kbytes Page：5 Pages | KEYSIGHT 是德科技 | |
IRF6691TR产品属性
- 类型
描述
- 型号
IRF6691TR
- 功能描述
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
23+ |
DIRECTFET |
50000 |
全新原装正品现货,支持订货 |
|||
IR |
19+ |
QFN |
18974 |
||||
IRVISHAY |
24+ |
NA |
35000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IOR |
2007 |
DIRECTFET |
490 |
原装现货海量库存欢迎咨询 |
|||
IR |
2223+ |
QFN |
26800 |
只做原装正品假一赔十为客户做到零风险 |
|||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
|||
IR |
2021+ |
QFN |
9000 |
原装现货,随时欢迎询价 |
|||
IR |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IR |
DIRECTFET |
9850 |
一级代理 原装正品假一罚十价格优势长期供货 |
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IRF6691TR规格书下载地址
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