位置：首页 > IC中文资料第2126页 > IRF6691TR1PBF
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6691TR1PBF | RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF |   | |
HEXFET Power MOSFET plus Schottky Diode HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile ( | IRF | |
IRF6691TR1PBF产品属性
- 类型
描述
- 型号
IRF6691TR1PBF
- 功能描述
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
IR |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
2019+ |
QFN |
36000 |
原盒原包装 可BOM配套 |
|||
IOR |
23+ |
QFN/DirectFET-M |
30000 |
代理全新原装现货,价格优势 |
|||
IR |
23+ |
QFNDirectFET-M |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
IR |
2447 |
DIRECTFET |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
Infineon Technologies |
23+ |
原装 |
8000 |
只做原装现货 |
|||
Infineon Technologies |
23+ |
原装 |
7000 |
||||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
QFN |
8540 |
只做原装正品现货或订货假一赔十! |
IRF6691TR1PBF规格书下载地址
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DdatasheetPDF页码索引
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