位置：首页 > IC中文资料第5322页 > IRF6691
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6691 | HEXFETPowerMOSFETplusSchottkyDiode HEXFETPowerMOSFETplusSchottkyDiode ●ApplicationSpecificMOSFETs ●IntegratesMonolithicTrenchSchottkyDiode ●IdealforCPUCoreDC-DCConverters ●LowConductionLosses ●LowReverseRecoveryLosses ●LowSwitchingLosses ●LowReverseRecoveryChargeandLowVf ●LowProfile( | IRF International Rectifier |  |   |
DirectFETPowerMOSFET Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | | | |
RoHsCompliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | | | |
RoHsCompliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | | | |
RoHsCompliant Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | | | |
DirectFETPowerMOSFET Description TheIRF6691PbFcombinesthelatestHEXFET®PowerMOSFETSilicontechnologywiththeadvancedDirectFETTMpackagingtoachievetheloweston-stateresistanceinapackagethathasthefootprintofaSO-8andonly0.7mmprofile.TheDirectFETpackageiscompatiblewithexistinglayout | IRF International Rectifier | | | |
SystemDCPowerSupply 文件：318.82 Kbytes Page：5 Pages | KEYSIGHTKeysight Technologies 是德科技是德科技（中国）有限公司 |  | |
IRF6691产品属性
- 类型
描述
- 型号
IRF6691
- 功能描述
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
23+ |
QFN |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
|||
IR |
ROHS |
13352 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
IRVISHAY |
24+ |
NA |
35000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
IR |
23+ |
QFN |
28000 |
原装正品 |
|||
IR |
22+ |
QFN |
20000 |
深圳原装现货正品有单价格可谈 |
|||
IR |
23+ |
QFN |
1009 |
优势库存 |
|||
IR |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
2023+ |
QFN |
5800 |
进口原装,现货热卖 |
|||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
IR |
24+ |
NA/ |
892 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
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IRF6691规格书下载地址
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