位置：首页 > IC中文资料第5322页 > IRF6691
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6691 | HEXFET Power MOSFET plus Schottky Diode HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile ( | IRF |   | |
IRF6691 | HEXFET Power MOSFET plus Schottky Diode | INFINEON 英飞凌 | | |
DirectFETPower MOSFET Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
HEXFET Power MOSFET plus Schottky Diode HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile ( | IRF | | ||
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
DirectFETPower MOSFET Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | | ||
System DC Power Supply 文件：318.82 Kbytes Page：5 Pages | KEYSIGHT 是德科技 | |
IRF6691产品属性
- 类型
描述
- 型号
IRF6691
- 功能描述
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IOR |
25+ |
DIRECTFE |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
23+ |
QFN |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
IR |
22+ |
DIRECTFET |
12245 |
现货,原厂原装假一罚十! |
|||
IOR |
24+ |
SMD |
2600 |
原装现货假一赔十 |
|||
IR |
2013+ |
QFN |
59800 |
授权分销IR系列全新原装正品，现货供应IRF6691TR，正品原装，品质保证，欢迎咨询洽谈。 |
|||
IR |
2023+ |
QFN |
5800 |
进口原装,现货热卖 |
|||
IR |
24+ |
QFN |
60000 |
||||
IR |
24+ |
65230 |
|||||
IR |
24+ |
DIRECTFET |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
25+ |
DIRECTFET |
10000 |
原装现货假一罚十 |
IRF6691规格书下载地址
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