HEXFET Power MOSFET plus Schottky Diode

HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile (

HEXFET Power MOSFET plus Schottky Diode

DirectFET

Power MOSFET

Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

RoHs Compliant

Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

HEXFET Power MOSFET plus Schottky Diode

HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile (

RoHs Compliant

Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

RoHs Compliant

Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

DirectFET

Power MOSFET

Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout

100BASE-T MII-to-PMD Transceiver

GENERAL DESCRIPTION The ML6691 implements the upper portion of the physical layer for the Fast Ethernet 100BASE-T standard. Functions contained in the ML6691 include a 4B/5B encoder/ decoder, a Stream Cipher scrambler/descrambler, and collision detect. Additional functions of the ML6691 — accessi

100BASE-T MII-to-PMD Transceiver

GENERAL DESCRIPTION The ML6691 implements the upper portion of the physical layer for the Fast Ethernet 100BASE-T standard. Functions contained in the ML6691 include a 4B/5B encoder/ decoder, a Stream Cipher scrambler/descrambler, and collision detect. Additional functions of the ML6691 — accessi

Four-Channel Thermistor Temperature-to-Pulse- Width Converter

文件：151.99 Kbytes Page：7 Pages

Four-Channel Thermistor Temperature-to-Pulse- Width Converter

文件：151.99 Kbytes Page：7 Pages

DRAM Interface IC

文件：168.58 Kbytes Page：7 Pages