位置：首页 > IC中文资料第2126页 > IRF6691TR1
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
IRF6691TR1 | HEXFET Power MOSFET plus Schottky Diode HEXFET Power MOSFET plus Schottky Diode ● Application Specific MOSFETs ● Integrates Monolithic Trench Schottky Diode ● Ideal for CPU Core DC-DC Converters ● Low Conduction Losses ● Low Reverse Recovery Losses ● Low Switching Losses ● Low Reverse Recovery Charge and Low Vf ● Low Profile ( | IRF |   | |
RoHs Compliant Description The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout | IRF | |
IRF6691TR1产品属性
- 类型
描述
- 型号
IRF6691TR1
- 功能描述
MOSFET 20V 1 N-CH HEXFET 1.8mOhms 47nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
24+ |
NA/ |
4947 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
IOR |
2007 |
DIRECTFET |
835 |
原装现货海量库存欢迎咨询 |
|||
Infineon Technologies |
22+ |
DirectFET? Isometric MT |
9000 |
原厂渠道,现货配单 |
|||
IR |
24+ |
QFN |
9600 |
原装现货,优势供应,支持实单! |
|||
IR |
18+ |
QFN |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
2023+ |
QFN |
4947 |
原厂全新正品旗舰店优势现货 |
|||
IOR |
25+ |
DIRECTFE |
4500 |
全新原装、诚信经营、公司现货销售 |
|||
IR |
24+ |
65230 |
|||||
IR |
22+ |
QFN |
8000 |
原装正品支持实单 |
|||
IOR |
24+ |
SMD |
2600 |
原装现货假一赔十 |
IRF6691TR1芯片相关品牌
IRF6691TR1规格书下载地址
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DdatasheetPDF页码索引
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