AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.0265Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable opera

100V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Advanced Process Technology

文件：308.2 Kbytes Page：13 Pages

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

N-Channel 100-V (D-S) MOSFET

FEATURES • TrenchFET® Power MOSFET • 175 °C Junction Temperature • Low Thermal Resistance Package • 100 Rg Tested APPLICATIONS • Isolated DC/DC Converters

丝印代码：D2PAK；Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

AUTOMOTIVE MOSFET

VDSS = 100V RDS(on) = 26.5mΩ ID = 36A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating te

Advanced Process Technology

文件：308.2 Kbytes Page：13 Pages

采用 TO-262 封装的 100V 单 N 沟道功率 MOSFET

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：308.2 Kbytes Page：13 Pages

采用 D2Pak 封装的 100V 单 N 通道 HEXFET 功率 MOSFET

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

Advanced Process Technology

文件：308.2 Kbytes Page：13 Pages

Advanced Process Technology

文件：384.04 Kbytes Page：12 Pages

丝印代码：-MG；NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

NPN 9 GHz wideband transistor

DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency

Octal buffer/line driver; 3-state; inverting

GENERAL DESCRIPTION The 74HC/HCT540 are high-speed Si-gate CMOS devices and are pin compatible with low power Schottky TTL (LSTTL). They are specified in compliance with JEDEC standard no. 7A. FEATURES • Inverting outputs • Output capability: bus driver • ICC category: MSI

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge capacity

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS(VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere)

VOLTAGE 20 to 100 Volts CURRENT - 5 Ampere FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O • For surface mounted applications • Low profile package • Built-in strain relief • Low power loss, High efficiency • High surge ca