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IRF540ZS中文资料
IRF540ZS数据手册规格书PDF详情
VDSS = 100V
RDS(on) = 26.5mΩ
ID = 36A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
IRF540ZS产品属性
- 类型
描述
- 型号
IRF540ZS
- 功能描述
MOSFET N-CH 100V 36A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
TO-263 |
3020 |
只做原厂渠道 可追溯货源 |
|||
IR |
22+ |
D2-PAK |
9450 |
原装正品，实单请联系 |
|||
Infineon(英飞凌) |
24+ |
TO-263 |
10049 |
支持大陆交货,美金交易。原装现货库存。 |
|||
IR |
24+ |
N/A |
8000 |
全新原装正品,现货销售 |
|||
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
INFINEON/英飞凌 |
2450+ |
TO-263 |
9850 |
只做原装正品现货或订货假一赔十! |
|||
IR |
13+ |
TO-263 |
41258 |
原装分销 |
|||
IR |
25+ |
D2-pak |
2500 |
自家优势产品,欢迎来电咨询! |
|||
IR |
24+ |
D2-Pak |
8866 |
||||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
IRF540ZSTRLPBF 价格
参考价格：￥5.0353
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