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BFG540晶体管资料
BFG540别名:BFG540三极管、BFG540晶体管、BFG540晶体三极管
BFG540生产厂家:
BFG540制作材料:Si-NPN
BFG540性质:表面帖装型 (SMD)_超高频/特高频 (UHF)
BFG540封装形式:贴片封装
BFG540极限工作电压:20V
BFG540最大电流允许值:0.12A
BFG540最大工作频率:9GHZ
BFG540引脚数:3
BFG540最大耗散功率:
BFG540放大倍数:
BFG540图片代号:H-17
BFG540vtest:20
BFG540htest:9000000000
- BFG540atest:0.12
BFG540wtest:0
BFG540代换 BFG540用什么型号代替:
BFG540价格
参考价格:¥0.4500
型号:BFG540 品牌:NXP 备注:这里有BFG540多少钱,2025年最近7天走势,今日出价,今日竞价,BFG540批发/采购报价,BFG540行情走势销售排行榜,BFG540报价。型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
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BFG540 | NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | ||
BFG540 | NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | |
BFG540 | NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | ||
BFG540 | RF Manual 16th edition | ETC 知名厂家 | ETC | |
BFG540 | isc Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h | ISC 无锡固电 | ||
BFG540 | NPN 9GHz Wideband Transistor ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability. | KEXIN 科信电子 | ||
BFG540 | isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISC 无锡固电 | ||
BFG540 | isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | ||
BFG540 | NPN高频低噪声晶体管 | ETC 知名厂家 | ETC | |
BFG540 | NPN 9 GHz宽频带晶体管 | ETC 知名厂家 | ETC | |
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su | Philips 飞利浦 | |||
NPN 9 GHz wideband transistors | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend | Philips 飞利浦 | |||
NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre | Philips 飞利浦 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
RF Manual 16th edition | ETC 知名厂家 | ETC | ||
封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频 | ETC 知名厂家 | ETC | ||
高频三极管 | ETC 知名厂家 | ETC | ||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
isc Silicon NPN RF Transistor 文件:245.37 Kbytes Page:2 Pages | ISC 无锡固电 | |||
NPN 9 GHz wideband transistor 文件:138.25 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
NPN 9 GHz wideband transistor 文件:136.6 Kbytes Page:16 Pages | JMNIC 锦美电子 | |||
isc Silicon NPN RF Transistor 文件:343.31 Kbytes Page:3 Pages | ISC 无锡固电 | |||
PISTON SEALS DESCRIPTION The BECA 540 profile is a single acting piston seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 549 profile is specially designed for applications where the seal is in contact with food products. It is characteri | FRANCEJOINT |
BFG540产品属性
- 类型
描述
- 型号
BFG540
- 制造商
PHILIPS
- 制造商全称
NXP Semiconductors
- 功能描述
NPN 9 GHz wideband transistor
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
恩XP |
24+ |
SOT143 |
6000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
恩XP |
10+ |
MA |
6000 |
绝对原装自己现货 |
|||
恩XP |
19+ |
SOT143 |
20000 |
400 |
|||
恩XP |
24+ |
SOT143 |
5000 |
深圳现货价格优势 |
|||
恩XP |
25+23+ |
SOT343 |
42663 |
绝对原装正品全新进口深圳现货 |
|||
恩XP |
2450+ |
SOT143 |
8850 |
只做原装正品假一赔十为客户做到零风险!! |
|||
PHI |
24+ |
SOT343 |
42000 |
只做原装进口现货 |
|||
PHI |
22+ |
SOT23 |
8000 |
原装正品支持实单 |
|||
PHI |
25+ |
SOT143 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
|||
恩XP |
24+ |
SOT-343 |
504244 |
免费送样原盒原包现货一手渠道联系 |
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BFG540规格书下载地址
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2019-11-30
DdatasheetPDF页码索引
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