BFG540晶体管资料

  • BFG540别名:BFG540三极管、BFG540晶体管、BFG540晶体三极管

  • BFG540生产厂家

  • BFG540制作材料:Si-NPN

  • BFG540性质:表面帖装型 (SMD)_超高频/特高频 (UHF)

  • BFG540封装形式:贴片封装

  • BFG540极限工作电压:20V

  • BFG540最大电流允许值:0.12A

  • BFG540最大工作频率:9GHZ

  • BFG540引脚数:3

  • BFG540最大耗散功率

  • BFG540放大倍数

  • BFG540图片代号:H-17

  • BFG540vtest:20

  • BFG540htest:9000000000

  • BFG540atest:0.12

  • BFG540wtest:0

  • BFG540代换 BFG540用什么型号代替

BFG540价格

参考价格:¥0.4500

型号:BFG540 品牌:NXP 备注:这里有BFG540多少钱,2026年最近7天走势,今日出价,今日竞价,BFG540批发/采购报价,BFG540行情走势销售排行榜,BFG540报价。
型号 功能描述 生产厂家 企业 LOGO 操作
BFG540

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

BFG540

NPN 9 GHz wideband transistor

ETC

知名厂家

BFG540

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

BFG540

RF Manual 16th edition

ETC

知名厂家

BFG540

isc Silicon NPN RF Transistor

DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h

ISC

无锡固电

BFG540

NPN 9GHz Wideband Transistor

■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.

KEXIN

科信电子

BFG540

isc Silicon NPN RF Transistor

文件:245.37 Kbytes Page:2 Pages

ISC

无锡固电

BFG540

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

BFG540

NPN高频低噪声晶体管

ETC

知名厂家

BFG540

NPN 9 GHz宽频带晶体管

ETC

知名厂家

NPN 9 GHz wideband transistors

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistor

ETC

知名厂家

NPN 9 GHz wideband transistors

DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su

Philips

飞利浦

NPN 9 GHz wideband transistors

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend

Philips

飞利浦

NPN 9 GHz wideband transistor

DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre

Philips

飞利浦

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

RF Manual 16th edition

ETC

知名厂家

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

NPN SILICON RF TRANSISTOR

Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V,IC=40mA,f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V,IC=10mA,f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V,IC=40mA,f=1GHz

SKTECHNOLGYSHIKE Electronics

时科广东时科微实业有限公司

RF Manual 16th edition

ETC

知名厂家

封装/外壳:TO-253-4,TO-253AA 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

封装/外壳:SOT-143R 包装:卷带(TR) 描述:RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品 晶体管 - 双极(BJT)- 射频

ETC

知名厂家

高频三极管

ETC

知名厂家

NPN 9 GHz wideband transistor

文件:138.25 Kbytes Page:16 Pages

JMNIC

锦美电子

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

isc Silicon NPN RF Transistor

文件:245.37 Kbytes Page:2 Pages

ISC

无锡固电

NPN 9 GHz wideband transistor

文件:138.25 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:136.6 Kbytes Page:16 Pages

JMNIC

锦美电子

NPN 9 GHz wideband transistor

文件:136.6 Kbytes Page:16 Pages

JMNIC

锦美电子

isc Silicon NPN RF Transistor

文件:343.31 Kbytes Page:3 Pages

ISC

无锡固电

PISTON SEALS

DESCRIPTION The BECA 540 profile is a single acting piston seal composed of a profiled, filled PTFE U-ring type seal and a V-spring that is resistant to corrosion. The BECA 549 profile is specially designed for applications where the seal is in contact with food products. It is characteri

FRANCEJOINT

BFG540产品属性

  • 类型

    描述

  • 型号

    BFG540

  • 制造商

    PHILIPS

  • 制造商全称

    NXP Semiconductors

  • 功能描述

    NPN 9 GHz wideband transistor

更新时间:2026-1-1 16:03:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
恩XP
2019+
SOT143
36000
原盒原包装 可BOM配套
24+
2000
全新
PHL
17+
SOT-143
6200
100%原装正品现货
恩XP
18+
SOT-143
85600
保证进口原装可开17%增值税发票
恩XP
22+
SOT143
8000
原装正品支持实单
恩XP
23+
N/A
6000
公司只做原装,可来电咨询
恩XP
2025+
SOT143
5000
原装进口价格优 请找坤融电子!
恩XP
24+
N/A
193048
原厂可订货,技术支持,直接渠道。可签保供合同
恩XP
1922+
SOT143
9600
原装公司现货假一罚十特价欢迎来电咨询
恩XP
25+
SOT-343
32000
NXP/恩智浦全新特价BFG540W/XR即刻询购立享优惠#长期有货

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