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BFG540晶体管资料

BFG540别名：BFG540三极管、BFG540晶体管、BFG540晶体三极管
BFG540生产厂家：
BFG540制作材料：Si-NPN
BFG540性质：表面帖装型（SMD）_超高频/特高频（UHF）
BFG540封装形式：贴片封装
BFG540极限工作电压：20V
BFG540最大电流允许值：0.12A
BFG540最大工作频率：9GHZ
BFG540引脚数：3
BFG540最大耗散功率：
BFG540放大倍数：
BFG540图片代号：H-17
BFG540vtest：20
BFG540htest：9000000000
BFG540atest：0.12
BFG540wtest：0

BFG540代换 BFG540用什么型号代替：

BFG540价格

参考价格：￥0.4500

型号：BFG540 品牌：NXP 备注：这里有BFG540多少钱，2026年最近7天走势，今日出价，今日竞价，BFG540批发/采购报价，BFG540行情走势销售排行榜，BFG540报价。

型号	功能描述	生产厂家企业	LOGO
BFG540	丝印代码：-MG；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540	丝印代码：-MG；NPN 9 GHz wideband transistor	ETC 知名厂家	ETC
BFG540	丝印代码：N37；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V，IC=40mA，f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V，IC=10mA，f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V，IC=40mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
BFG540	丝印代码：-MG；RF Manual 16th edition	ETC 知名厂家	ETC
BFG540	isc Silicon NPN RF Transistor DESCRIPTION • Low Noise Figure NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz • High Gain ︱ S21︱ 2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Designed for use in low noise ,h	ISC 无锡固电	ISC
BFG540	NPN 9GHz Wideband Transistor ■ Features ● High power gain ● Low noise figure ● High transition frequency ● Gold metallization ensures excellent reliability.	KEXIN 科信电子	KEXIN
BFG540	NPN 9 GHz宽频带晶体管	ETC 知名厂家	ETC
BFG540	isc Silicon NPN RF Transistor 文件：245.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BFG540	isc Silicon NPN RF Transistor 文件：343.31 Kbytes Page：3 Pages	ISC 无锡固电	ISC
BFG540	NPN高频低噪声晶体管	RM TECHNOLOGY	RM TECHNOLOGY
BFG540/X	丝印代码：tMM；NPN 9 GHz wideband transistors	ETC 知名厂家	ETC
BFG540/X	丝印代码：tMM；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540/X	丝印代码：tMM；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540/X	丝印代码：tMM；RF Manual 16th edition	ETC 知名厂家	ETC
BFG540/X	丝印代码：-MM；NPN 9 GHz wideband transistor	ETC 知名厂家	ETC
BFG540/X	丝印代码：-MM；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540/XR	丝印代码：-MR；NPN 9 GHz wideband transistor	ETC 知名厂家	ETC
BFG540/XR	丝印代码：-MR；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540/XR	丝印代码：tMR；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540/XR	丝印代码：tMR；NPN 9 GHz wideband transistors	ETC 知名厂家	ETC
BFG540/XR	丝印代码：tMR；RF Manual 16th edition	ETC 知名厂家	ETC
BFG540SLASHX	丝印代码：-MM；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540SLASHX	丝印代码：-MM；NPN 9 GHz wideband transistor	ETC 知名厂家	ETC
BFG540SLASHX	丝印代码：tMM；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540SLASHX	丝印代码：tMM；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540SLASHX	丝印代码：tMM；NPN 9 GHz wideband transistors	ETC 知名厂家	ETC
BFG540SLASHX	丝印代码：tMM；RF Manual 16th edition	ETC 知名厂家	ETC
BFG540SLASHXR	丝印代码：tMR；RF Manual 16th edition	ETC 知名厂家	ETC
BFG540SLASHXR	丝印代码：tMR；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT343N plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540SLASHXR	丝印代码：-MR；NPN 9 GHz wideband transistor	ETC 知名厂家	ETC
BFG540SLASHXR	丝印代码：tMR；NPN 9 GHz wideband transistors DESCRIPTION NPN silicon planar epitaxial transistor in a 4-pin dual-emitter SOT143B plastic package. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS RF front end applications in the GHz range, su	PHILIPS 飞利浦	PHILIPS
BFG540SLASHXR	丝印代码：tMR；NPN 9 GHz wideband transistors	ETC 知名厂家	ETC
BFG540W	丝印代码：N9；RF Manual 16th edition	ETC 知名厂家	ETC
BFG540W	丝印代码：N9；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend	PHILIPS 飞利浦	PHILIPS
BFG540W	丝印代码：N9；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540W/X	丝印代码：N7；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend	PHILIPS 飞利浦	PHILIPS
BFG540W/X	丝印代码：N7；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540W/XR	丝印代码：N8；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend	PHILIPS 飞利浦	PHILIPS
BFG540W/XR	丝印代码：N8；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540WSLASHX	丝印代码：N7；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend	PHILIPS 飞利浦	PHILIPS
BFG540WSLASHX	丝印代码：N7；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540WSLASHXR	丝印代码：N8；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors in plastic, 4-pin dual-emitter SOT343N and SOT343R packages. FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. APPLICATIONS They are intend	PHILIPS 飞利浦	PHILIPS
BFG540WSLASHXR	丝印代码：N8；NPN 9 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre	PHILIPS 飞利浦	PHILIPS
BFG540W-X	RF Manual 16th edition	ETC 知名厂家	ETC
BFG540W-XR	RF Manual 16th edition	ETC 知名厂家	ETC
BFG540-X	RF Manual 16th edition	ETC 知名厂家	ETC
BFG540-X	丝印代码：N43；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V，IC=40mA，f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V，IC=10mA，f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V，IC=40mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
BFG540-XR	丝印代码：N49；NPN SILICON RF TRANSISTOR Feature High gain:︱S21e︱2 TYP. Value is 13dB @ VCE=8V，IC=40mA，f=0.9GHz Low noise: NF TYP. Value is 1.8dB @ VCE=10V，IC=10mA，f=0.9GHz fT (TYP.) : TYP. Value is 9GHz @ VCE=8V，IC=40mA，f=1GHz	SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司	SKTECHNOLGY
BFG540-XR	RF Manual 16th edition	ETC 知名厂家	ETC
BFG540/X,215	封装/外壳：TO-253-4，TO-253AA 包装：卷带（TR）描述：RF TRANS NPN 15V 9GHZ SOT143B 分立半导体产品晶体管 - 双极（BJT）- 射频	ETC 知名厂家	ETC
BFG540/XR,215	封装/外壳：SOT-143R 包装：卷带（TR）描述：RF TRANS NPN 15V 9GHZ SOT143R 分立半导体产品晶体管 - 双极（BJT）- 射频	ETC 知名厂家	ETC
BFG540;/X	高频三极管	MXTronics	MXTronics
BFG540_15	NPN 9 GHz wideband transistor 文件：138.25 Kbytes Page：16 Pages	JMNIC 锦美电子	JMNIC
BFG540_18	isc Silicon NPN RF Transistor 文件：343.31 Kbytes Page：3 Pages	ISC 无锡固电	ISC
BFG540_19	isc Silicon NPN RF Transistor 文件：245.37 Kbytes Page：2 Pages	ISC 无锡固电	ISC
BFG540_2015	NPN 9 GHz wideband transistor 文件：138.25 Kbytes Page：16 Pages	JMNIC 锦美电子	JMNIC
BFG540W_15	NPN 9 GHz wideband transistor 文件：136.6 Kbytes Page：16 Pages	JMNIC 锦美电子	JMNIC
BFG540W_2015	NPN 9 GHz wideband transistor 文件：136.6 Kbytes Page：16 Pages	JMNIC 锦美电子	JMNIC
BFG540X	isc Silicon NPN RF Transistor 文件：343.31 Kbytes Page：3 Pages	ISC 无锡固电	ISC
BFS540	NPN 9 GHz wideband transistor DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for RF wideband amplifier applications such as satellite TV systems and RF portable communication equipment with signal frequencies up to 2 GHz. FEATURES • High power gain • Low noise figure • High transition frequency	PHILIPS 飞利浦	PHILIPS

BFG540产品属性

类型
描述
VCEO(V)：
15
ICM(mA)：
120
PT(W)：
0.4
2(dB)：
15
NF(dB)：
1.9
GUM(dB)：
18
@Vce(V)：
8
@Ic(mA)：
40
@fT(GHz)：
0.9
Package：
SOT143B
兼容型号：
ON4832;/X

BFG540供应商更多...

更新时间：2026-5-13 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	BFG540X	恩XP	24+	标准封装	46048	全新原装正品/价格优惠/质量保障	询价
深圳市科芯源微电子有限公司	BFG540	恩XP	23+	SOT-143	100586	全新原厂原装正品现货,可提供技术支持、样品免费!	询价
中天科工半导体（深圳）有限公司	BFG540W/XR	恩XP	25+	SOT-343	32000	NXP/恩智浦全新特价BFG540W/XR即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	BFG540	MX	2016+	SOT343R	46	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市振宏微科技有限公司	BFG540	SOT-143	23+	NA	15659	振宏微专业只做正品,假一罚百!	询价
深圳市富利微电子科技有限公司	BFG540	恩XP	25+	SOT343	30000	公司新到进口原装现货假一赔十	询价
深圳科宇泰科技有限公司	BFG540	恩XP	21+	标准封装	12000	进口原装,优势专营品牌!	询价
深圳市正迈科技有限公司	BFG540	恩XP	23+	NA	13824	专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品	询价
深圳市得捷芯城科技有限公司	BFG540	恩XP	25+	N/A	18798	原装正品现货,原厂订货,可支持含税原型号开票。	询价
深圳市凯睿晟科技有限公司	BFG540	恩XP	21+	SOT-143	2000	百域芯优势实单必成可开13点增值税	询价

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找IC，尽在114IC

BFG540晶体管资料

BFG540价格

BFG540产品属性

BFG540供应商更多...

BFG540芯片相关品牌

BFG540规格书下载地址

BFG540参数引脚图相关

BFG540数据表相关新闻

BFHK-1982+

BFG235

BFP640H6327XTSA1

BFC233920474

BFP640

BF998，现货销售，只售原装，兴中扬电子

DdatasheetPDF页码索引