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IRF540ZSPBF中文资料
IRF540ZSPBF数据手册规格书PDF详情
VDSS = 100V
RDS(on) = 26.5mΩ
ID = 36A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
● Lead-Free
IRF540ZSPBF产品属性
- 类型
描述
- 型号
IRF540ZSPBF
- 功能描述
MOSFET 100V 1 N-CH HEXFET 26.5mOhms 42nC
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
N-Channel
- 汲极/源极击穿电压
650 V
- 闸/源击穿电压
25 V
- 漏极连续电流
130 A 电阻汲极/源极
- RDS（导通）
0.014 Ohms
- 配置
Single
- 安装风格
Through Hole
- 封装/箱体
Max247
- 封装
Tube
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
2024+ |
N/A |
70000 |
柒号只做原装 现货价秒杀全网 |
|||
IR |
24+ |
TO-263 |
5000 |
只做原装公司现货 |
|||
Infineon |
24+ |
NA |
3000 |
进口原装正品优势供应 |
|||
IR |
23+ |
TO-263 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
International Rectifier |
2022+ |
1 |
全新原装 货期两周 |
||||
IR |
16+ |
TO-263 |
50 |
普通 |
|||
IR |
2447 |
TO-263 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
INFINEON |
25+ |
TO-263 |
3000 |
就找我吧!--邀您体验愉快问购元件! |
|||
IR |
21+ |
TO-263 |
10000 |
原装现货假一罚十 |
|||
Infineon Technologies |
22+ |
TO2633 D2Pak (2 Leads + Tab) T |
9000 |
原厂渠道,现货配单 |
IRF540ZSPBF 价格
参考价格：￥2.8172
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