AUIRF3805价格

参考价格:¥8.5135

型号:AUIRF3805 品牌:IR 备注:这里有AUIRF3805多少钱,2025年最近7天走势,今日出价,今日竞价,AUIRF3805批发/采购报价,AUIRF3805行情走势销售排行榜,AUIRF3805报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AUIRF3805

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

AUIRF3805

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AUIRF3805

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

Infineon

英飞凌

AUIRF3805

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

Infineon

英飞凌

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 240A@ TC=25℃ · Drain Source Voltage -VDSS= 55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.6mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching

ISC

无锡固电

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

Infineon

英飞凌

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Ultra Low On-Resistance

文件:311.87 Kbytes Page:14 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

Advanced Process Technology

文件:748.76 Kbytes Page:12 Pages

Infineon

英飞凌

汽车 Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-263CA 7p 封装

Infineon

英飞凌

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

Infineon

英飞凌

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

Ultra Low On-Resistance

文件:311.87 Kbytes Page:14 Pages

etc2List of Unclassifed Manufacturers

etc未分类制造商etc2未分类制造商

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7p封装

Infineon

英飞凌

Advanced Process Technology

文件:748.76 Kbytes Page:12 Pages

Infineon

英飞凌

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

Infineon

英飞凌

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

ALUMINUM NEMA 4X BOX WITH EMI/RFI SHIELDING

文件:136.2 Kbytes Page:3 Pages

BUD

AUIRF3805产品属性

  • 类型

    描述

  • 型号

    AUIRF3805

  • 功能描述

    MOSFET AUTO 55V 1 N-CH HEXFET 3.3mOhms

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-10-3 14:20:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
21+
TO220
1980
Infineon
24+
NA
3000
进口原装正品优势供应
IR
20+
TO-220
36900
原装优势主营型号-可开原型号增税票
IR
15+
原厂原装
3200
进口原装现货假一赔十
IR
13+
TO-220
3000
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon/英飞凌
2023+
TO-220
6000
原装正品现货、支持第三方检验、终端BOM表可配单提供
Infineon(英飞凌)
24+
TO-263CA-7
7828
支持大陆交货,美金交易。原装现货库存。
IR
24+
TO220
8950
BOM配单专家,发货快,价格低
INFINEON/英飞凌
24+
TO-220
60000
全新原装现货
IR
24+
TO220
9600
原装现货,优势供应,支持实单!

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