位置:首页 > IC中文资料 > AUIRF3805

AUIRF3805价格

参考价格:¥8.5135

型号:AUIRF3805 品牌:IR 备注:这里有AUIRF3805多少钱,2026年最近7天走势,今日出价,今日竞价,AUIRF3805批发/采购报价,AUIRF3805行情走势销售排行榜,AUIRF3805报价。
型号 功能描述 生产厂家 企业 LOGO 操作
AUIRF3805

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-220AB 封装

\n优势:\n优势:\n • 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅,符合 RoHS\n• 通过汽车认证;

INFINEON

英飞凌

AUIRF3805

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

AUIRF3805

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

INFINEON

英飞凌

AUIRF3805

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

汽车 Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 TO-263CA 7p 封装

\n优势:\n• 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅,符合 RoHS\n• 通过汽车认证;

INFINEON

英飞凌

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 240A@ TC=25℃ · Drain Source Voltage -VDSS= 55V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.6mΩ(Max)@VGS= 10V APPLICATIONS · DC-DC Converters · Automatic Test Equipment · High-Side Switching

ISC

无锡固电

汽车Q101 55V 单个 N 通道 HEXFET Power MOSFET, 采用 D2-Pak 7p封装

\n优势:\n• 先进加工技术\n• 超低导通电阻\n• 175°C 的工作温度\n• 快速开关\n• 允许重复雪崩达到 Tjmax\n• 无铅,符合 RoHS\n• 通过汽车认证;

INFINEON

英飞凌

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

HEXFET짰 Power MOSFET

V(BR)DSS 55V RDS(on) typ. 2.0mΩ max. 2.6mΩ ID 240A Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this des

IRF

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

INFINEON

英飞凌

Advanced Process Technology

文件:748.76 Kbytes Page:12 Pages

INFINEON

英飞凌

Ultra Low On-Resistance

文件:311.87 Kbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Ultra Low On-Resistance

文件:388.08 Kbytes Page:15 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

INFINEON

英飞凌

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

Advanced Process Technology

文件:748.76 Kbytes Page:12 Pages

INFINEON

英飞凌

Ultra Low On-Resistance

文件:311.87 Kbytes Page:14 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

AUTOMOTIVE GRADE

文件:764.15 Kbytes Page:13 Pages

INFINEON

英飞凌

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

HEXFET짰 Power MOSFET

文件:388.08 Kbytes Page:15 Pages

IRF

SURFACE MOUNT ZENER DIODE

Zener Voltage -10 to 68 Volts Steady State Power - 1.5 Watts FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ For surface mount applications ♦ Glass passivated chip junction ♦ Low Zener impedance ♦ Low regulation factor ♦ High temperature soldering

GE

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

Low-Power BiCMOS Current-Mode PWM

文件:383.98 Kbytes Page:20 Pages

TI

德州仪器

AUIRF3805产品属性

  • 类型

    描述

  • OPN:

    AUIRF3805

  • Qualification:

    Automotive

  • Package name:

    TO220

  • VDS max:

    55 V

  • RDS (on) @10V max:

    3.3 mΩ

  • ID @25°C max:

    160 A

  • QG typ @10V:

    190 nC

  • Polarity:

    N

  • VGS(th) min:

    2 V

  • VGS(th) max:

    4 V

  • Technology:

    Gen 10.2

更新时间:2026-8-3 16:56:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINEON/英飞凌
2022+
50
6600
只做原装,假一罚十,长期供货。
INTERNATIONALRECTIFIER
2450+
NA
9850
只做原厂原装正品现货或订货假一赔十!
IR
25+23+
TO220
12863
绝对原装正品全新进口深圳现货
Infineon/英飞凌
21+
D2PAK
6820
只做原装,质量保证
INFINEON/英飞凌
26+
NA
30000
房间原装现货特价热卖,有单详谈
INTERNATIONALRECTIFIER
22+
N/A
12245
现货,原厂原装假一罚十!
26+
TO-263-7
890000
一级总代理商原厂原装大批量现货 一站式服务
INFINEON
24+
TO-263
39500
进口原装现货 支持实单价优
Infineon
24+
NA
3000
进口原装正品优势供应
Infineon(英飞凌)
25+
D2PAK-7
18798
原装正品现货,原厂订货,可支持含税原型号开票。

AUIRF3805数据表相关新闻