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位置：首页 > IC中文资料第249页 > IRF24

IRF24价格

参考价格：￥90.9915

型号：IRF240 品牌：SGS 备注：这里有IRF24多少钱，2025年最近7天走势，今日出价，今日竞价，IRF24批发/采购报价，IRF24行情走势销售排行榜，IRF24报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF240

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

Fairchild

仙童半导体

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state res

IRF

IRF240

Static Drain-Source On-Resistance

DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors

ISC

无锡固电

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF240

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

Samsung

三星

IRF240-243

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

Fairchild

仙童半导体

IRF240R

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF241

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

Samsung

三星

IRF241

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

Fairchild

仙童半导体

IRF241

Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=18A@ TC=25℃ • Drain Source Voltage : VDSS= 150V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

ISC

无锡固电

IRF241R

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF242

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

Samsung

三星

IRF242

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

Fairchild

仙童半导体

IRF242R

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF243

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

Samsung

三星

IRF243

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

Fairchild

仙童半导体

IRF243

Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=16A@ TC=25℃ • Drain Source Voltage- : VDSS= 150V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.22Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

ISC

无锡固电

IRF243R

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF244

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Intersil

IRF245

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Intersil

IRF245

Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=13A@ TC=25℃ • Drain Source Voltage- : VDSS= 250V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.28Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

ISC

无锡固电

IRF246

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Intersil

IRF247

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Intersil

IRF24ER6R8K

Inductors, Epoxy Conformal Coated, Axial Leaded

FEATURES • High performance ferrite core is used in this epoxy conformally coated choke which allows for inductance values to 1000 μH • Axial lead type, small lightweight design • Special magnetic core structure contributes to high Q and self-resonant frequencies • Treated with epoxy resin

VishayVishay Siliconix

威世威世科技公司

IRF240

N-Channel Power MOSFETs, 18A, 150-200V

ONSEMI

安森美半导体

IRF240

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件：19.38 Kbytes Page：2 Pages

SEME-LAB

IRF240

Repetitive Avalanche Ratings

文件：150.3 Kbytes Page：7 Pages

IRF

IRF240

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF240

N-CHANNEL POWER MOSFET

文件：111.97 Kbytes Page：3 Pages

SEME-LAB

IRF240

18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

文件：59.29 Kbytes Page：7 Pages

Intersil

IRF240_09

N-CHANNEL POWER MOSFET

文件：111.97 Kbytes Page：3 Pages

SEME-LAB

IRF240_15

Repetitive Avalanche Ratings

文件：150.3 Kbytes Page：7 Pages

IRF

IRF240R

Trans MOSFET N-CH Si 200V 18A

ETC

知名厂家

IRF240SMD

N.CHANNEL POWER MOSFET

文件：22.63 Kbytes Page：2 Pages

SEME-LAB

IRF242

Static Drain-Source On-Resistance

文件：48.31 Kbytes Page：2 Pages

ISC

无锡固电

IRF242

N-CHANNEL POWER MOSFET

ONSEMI

安森美半导体

IRF244

Static Drain-Source On-Resistance

文件：48.33 Kbytes Page：2 Pages

ISC

无锡固电

IRF246

Nanosecond Switching Speeds

文件：48.36 Kbytes Page：2 Pages

ISC

无锡固电

IRF247

Static Drain-Source On-Resistance

文件：48.41 Kbytes Page：2 Pages

ISC

无锡固电

IRF24ER101K

封装/外壳：轴向 包装：卷带（TR） 描述：FIXED IND 100UH 165MA 3.7 OHM TH 电感器，线圈，扼流圈 固定电感器

ETC

知名厂家

IRF24ER102K

封装/外壳：轴向 包装：卷带（TR） 描述：FIXED IND 1MH 60MA 30 OHM TH 电感器，线圈，扼流圈 固定电感器

ETC

知名厂家

IRF24产品属性

  • 类型

    描述

  • 型号

    IRF24

  • 制造商

    International Rectifier

  • 功能描述

    Trans MOSFET N-CH 200V 18A 3-Pin(2+Tab) TO-3

  • 制造商

    International Rectifier

  • 功能描述

    TRANS MOSFET N-CH 200V 18A 3PIN TO-204AE - Bulk

  • 制造商

    International Rectifier

  • 功能描述

    Single N-Channel 200 V 125 W 60 nC Hexfet Transistor Through Hole - TO-3

  • 制造商

    International Rectifier

  • 功能描述

    N CHANNEL MOSFET, 10V, 18A TO-204AE; Transistor

  • Polarity

    N Channel; Continuous Drain Current

  • Id

    18A; Drain Source Voltage

  • Vds

    10V; On Resistance

  • Rds(on)

    180mohm; Rds(on) Test Voltage

  • Vgs

    200V; Threshold Voltage Vgs

  • Typ

    4V ;RoHS

  • Compliant

    No

IRF24供应商更多...

更新时间：2025-12-17 11:21:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
标准国际(香港)有限公司
IRF240
Harris
25+
6
公司优势库存 热卖中!!
询价
深圳市纳艾斯科技有限公司
IRF2405
IR
24+
TO252
80000
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询价
深圳市华来深电子有限公司
IRF2405
IR
23+
TO252
8560
受权代理!全新原装现货特价热卖!
询价
深圳市科恒伟业电子有限公司
IRF240
IR
2450+
TO-252
6540
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询价
深圳市昊创电子有限公司
IRF240
IR
专业铁帽
TO-3
1200
原装铁帽专营,代理渠道量大可订货
询价
深圳市英瑞尔电子科技有限公司
IRF240
IOR
24+
TO-252
598000
原装现货假一赔十
询价
深圳市安富世纪电子有限公司
IRF240SMD
IR
23+
8000
专注配单,只做原装进口现货
询价
深圳市能元时代电子有限公司
IRF240
NO
23+
52733
##公司主营品牌长期供应100%原装现货可含税提供技术
询价
深圳市得捷芯城科技有限公司
IRF240
IR(国际整流器)
24+
NA/
8735
原厂直销,现货供应,账期支持!
询价
深圳市毅创腾电子科技有限公司
IRF240
IR
23+
模块
450
全新原装正品,量大可订货!可开17%增值票!价格优势!
询价

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IRF24规格书下载地址

IRF24参数引脚图相关

IRF24数据表相关新闻

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