N-CHANNEL POWER MOSFET

FEATURES • Low RDs

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=16A@ TC=25℃ • Drain Source Voltage- : VDSS= 150V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.22Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

Trans MOSFET N-CH 150V 16A 3-Pin(2+Tab) TO-3

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

SCHOTTKY RECTIFIER

175℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Low forward voltage drop High frequency operation Gu

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

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Low forward voltage drop

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SCHOTTKY RECTIFIER

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Interactive Catalog Replaces Catalog Pages

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