14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Description These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applica

Static Drain-Source On-Resistance

文件：48.33 Kbytes Page：2 Pages

14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs

Trans MOSFET N-CH 250V 14A 3-Pin(2+Tab) TO-3

SCHOTTKY RECTIFIER

125℃ TJ operation Unique high power, Half-Pak module Replaces three parallel DO-5’S Easier to mount and lower profile than DO-5’S High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Very low forward voltage drop High frequency operation

Carbon Composition Molded OD/OF Series (5 Tol.) OA Series (10)

文件：124.92 Kbytes Page：1 Pages

Performs measurements for liquid level, interface or density of liquids

文件：107.72 Kbytes Page：2 Pages

FOUR DIGITS DISPLAY

文件：101.12 Kbytes Page：1 Pages

FOUR DIGITS DISPLAY

文件：101.12 Kbytes Page：1 Pages