N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

Static Drain-Source On-Resistance

DESCRIPTION • Drain Current ID=18A@ TC=25℃ • Drain Source Voltage : VDSS= 150V(Min) • Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS • Switching power supplies • Switching converters,motor driver,relay driver • Audio amplifier and servo motors

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

POWER TRANSISTORS(3A,40W)

Complementary Silicon Plastic Power Transistors

Complementary Silicon Plastic Power Transisotors . . . designed for use in general purpose amplifier and switching applications. • Collector–Emitter Saturation Voltage — VCE = 1.2 Vdc (Max) @ IC = 3.0 Adc • Collector–Emitter Sustaining Voltage — VCEO(sus) = 80 Vdc (Min.) BD241B, BD242B

POWER TRANSISTORS(3A,40W)