Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —

POWER TRANSISTORS(6A,65W)

6 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 45-100 VOLTS 65 WATTS

Complementary Silicon Plastic Power Transistors

6 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 80–100 VOLTS 65 WATTS . . . designed for use in general purpose amplifier and switching applications. • Collector – Emitter Saturation Voltage — VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc • Collector Emitter Sustaining Voltage —