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IRF240价格

参考价格:¥90.9915

型号:IRF240 品牌:SGS 备注:这里有IRF240多少钱,2026年最近7天走势,今日出价,今日竞价,IRF240批发/采购报价,IRF240行情走势销售排行榜,IRF240报价。
型号 功能描述 生产厂家 企业 LOGO 操作
IRF240

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

FAIRCHILD

仙童半导体

IRF240

N-CHANNEL POWER MOSFET

FEATURES • Low RDs

SAMSUNG

三星

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state res

IRF

IRF240

Static Drain-Source On-Resistance

DESCRIPTION ·Drain Current ID=18A@ TC=25℃ ·Drain Source Voltage-: VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.18Ω(Max) APPLICATIONS ·Switching power supplies ·Switching converters,motor driver,relay driver ·Audio amplifier and servo motors

ISC

无锡固电

IRF240

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS THRU-HOLE

Part Number BVDSS RDS(on) ID IRF240 200V 0.18Ω 18A The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-sta

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

IRF240

HiRel MOSFETs

\n优势:;

INFINEON

英飞凌

IRF240

N-CHANNEL POWER MOSFET FOR HI.REL APPLICATIONS

文件:19.38 Kbytes Page:2 Pages

SEME-LAB

IRF240

N-CHANNEL POWER MOSFET

文件:111.97 Kbytes Page:3 Pages

SEME-LAB

IRF240

N-Channel Power MOSFETs, 18A, 150-200V

ONSEMI

安森美半导体

IRF240

SEMICONDUCTORS

文件:2.43533 Mbytes Page:31 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

IRF240

Repetitive Avalanche Ratings

文件:150.3 Kbytes Page:7 Pages

IRF

IRF240

18A, 200V, 0.180 Ohm, N-Channel Power MOSFET

文件:59.29 Kbytes Page:7 Pages

INTERSIL

N-Channel Power MOSFETs, 18A, 150-200V

N-Channel Power MOSFETs, 18A, 150-200V

FAIRCHILD

仙童半导体

Avalanche Energy Rated N-Channel Power MOSFETs

Avalanche Energy Rated N-Channel Power MOSFETs The IRF240R, IRF241R, IRF242R and IRF243R are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon-gate power field

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N-CHANNEL POWER MOSFET

文件:111.97 Kbytes Page:3 Pages

SEME-LAB

Repetitive Avalanche Ratings

文件:150.3 Kbytes Page:7 Pages

IRF

Trans MOSFET N-CH Si 200V 18A

NJSEMINew Jersey Semi-Conductor Products, Inc.

新泽西半导体新泽西半导体公司

N.CHANNEL POWER MOSFET

文件:22.63 Kbytes Page:2 Pages

SEME-LAB

AM/FM Transistor

AM/FM Transistor NPN Silicon

MOTOROLA

摩托罗拉

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Large power dissipation: PD = 1 W • Zener voltage VZ: 4.7 V to 51 V • Zener voltage allowable deviation: 10 • Auto mounting possible

PANASONIC

松下

Silicon planar type

文件:41.87 Kbytes Page:2 Pages

PANASONIC

松下

Silicon planar type

文件:41.48 Kbytes Page:2 Pages

PANASONIC

松下

RF POWER TRANSISTORS NPN SILICON

文件:129.9 Kbytes Page:6 Pages

MOTOROLA

摩托罗拉

IRF240产品属性

  • 类型

    描述

  • Minimum Operating Temperature:

    -55ᄀC

  • Maximum Power Dissipation:

    125000mW

  • Maximum Operating Temperature:

    150ᄀC

  • Maximum Gate Source Voltage:

    ᄆ20V

  • Maximum Drain Source Voltage:

    200V

  • Maximum Continuous Drain Current:

    18A

  • Material:

    Si

  • Configuration:

    Single

  • Channel Type:

    N

  • Channel Mode:

    Enhancement

  • Category:

    Power MOSFET

更新时间:2026-5-14 22:30:00
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