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IRF1405ZS-7P中文资料
IRF1405ZS-7P数据手册规格书PDF详情
VDSS = 55V
RDS(on) = 4.9mΩ
ID = 120A
Description
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.
Features
● Advanced Process Technology
● Ultra Low On-Resistance
● 175°C Operating Temperature
● Fast Switching
● Repetitive Avalanche Allowed up to Tjmax
IRF1405ZS-7P产品属性
- 类型
描述
- 型号
IRF1405ZS-7P
- 功能描述
MOSFET N-CH 55V 120A D2PAK7
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
HEXFET®
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
IR |
19+ |
TO-263-7 |
11200 |
||||
IR |
2016+ |
TO263 |
3000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
25+ |
TO-263-7 |
18000 |
原厂直接发货进口原装 |
||||
IR |
23+ |
TO-263 |
5000 |
原装正品,假一罚十 |
|||
IR |
23+ |
TO-263-7 |
11846 |
一级代理商现货批发,原装正品,假一罚十 |
|||
IR |
25+23+ |
TO-263 |
20828 |
绝对原装正品全新进口深圳现货 |
|||
IR |
18+ |
D2PAK-7 |
85600 |
保证进口原装可开17%增值税发票 |
|||
IR |
20+ |
D2Pak7Lead |
36900 |
原装优势主营型号-可开原型号增税票 |
|||
INFINE0N |
21+ |
D2PAK 7pin (TO-263 7pin) |
32568 |
100%进口原装!长期供应!绝对优势价格(诚信经营 |
|||
IR |
24+ |
65230 |
IRF1405ZS-7P 资料下载更多...
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