IRF1310价格

参考价格:¥3.4325

型号:IRF1310NPBF 品牌:INTERNATIONAL 备注:这里有IRF1310多少钱,2025年最近7天走势,今日出价,今日竞价,IRF1310批发/采购报价,IRF1310行情走势销售排行榜,IRF1310报价。
型号 功能描述 生产厂家&企业 LOGO 操作

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

N-Channel MOSFET Transistor

• DESCRITION • reliable device for use in a wide variety of applications • FEATURES • Static drain-source on-resistance: RDS(on) ≤0.036Ω • Enhancement mode • Fast Switching Speed • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation

ISC

无锡固电

Advanced Process Technology

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.036ohm, Id=42A)

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Fully Avalanche Rated

Description The D2Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2Pak is suitable for high current applications because of its low inter

KERSEMI

HEXFET Power MOSFET

Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provide

IRF

Power MOSFET(Vdss=100V, Rds(on)=0.04ohm, Id=41A)

VDSS = 100V RDS(on) = 0.04Ω ID = 41A Description Fourth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that H

IRF

Isc N-Channel MOSFET Transistor

文件:300.57 Kbytes Page:2 Pages

ISC

无锡固电

HEXFET POWER MOSFET

文件:592.94 Kbytes Page:8 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:599.79 Kbytes Page:9 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:599.79 Kbytes Page:9 Pages

IRF

Isc N-Channel MOSFET Transistor

文件:189.3 Kbytes Page:2 Pages

ISC

无锡固电

ADVANCED PROCESS TECHNOLOGY

文件:726.76 Kbytes Page:11 Pages

IRF

ADVANCED PROCESS TECHNOLOGY

文件:726.76 Kbytes Page:11 Pages

IRF

Advanced Process Technology

文件:726.76 Kbytes Page:11 Pages

IRF

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

VMI

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

ETCList of Unclassifed Manufacturers

未分类制造商

Speaker Cable, 4 C #14 Str BC-OFHC, PVC Jkt, CM, DIR BUR, Flexible

Product Description Speaker Cable, 4 Conductor 14 AWG (105 x 34) Oxygen-Free Bare Copper (High Conductivity), PE Insulation, PVC Jacket, CM, Direct Burial, Flexible

BELDEN

百通

Customer Specification

Construction Diameters (In) 1) Component 1 16 X 1 PAIR a) Conductor 22 (SOLID) AWG Tinned Copper 0.025 b) Insulation 0.010 Wall, Nom. PVC, Semi Rigid 0.045 (1) Color Code Alpha Wire Color Code A Pair Color Pair Color Pair Color 1 BLACK-RED 7 BLACKORANGE 13 RED-ORANGE 2 BLACK-WHITE 8 RED-

ALPHAWIREAlpha Wire

阿尔法电线

200 V - 1,000 V Single Phase Bridge

[VOLTAGE MULTIPLIERS INC.] 200 V - 1,000 V Single Phase Bridge 4.5 A - 5.0 A Forward Current 70 ns - 3000 ns Recovery Time

ETCList of Unclassifed Manufacturers

未分类制造商

IRF1310产品属性

  • 类型

    描述

  • 型号

    IRF1310

  • 制造商

    International Rectifier

  • 功能描述

    MOSFET N TO-220

更新时间:2025-8-13 18:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
IR
11+
TO-262
27
一级代理,专注军工、汽车、医疗、工业、新能源、电力
INFINEONINEON
20+
原装
65790
原装优势主营型号-可开原型号增税票
IR
2025+
TO-220
4675
全新原厂原装产品、公司现货销售
IR
23+
TO-262-3
11846
一级代理商现货批发,原装正品,假一罚十
IR
23+
TO-262
35890
IR
25+23+
TO-220
15572
绝对原装正品全新进口深圳现货
IR
2022+
TO-262
30000
进口原装现货供应,原装 假一罚十
VISHAY
24+
TO-220
12000
VISHAY专营进口原装现货假一赔十
IR
24+
TO-262
27
只做原厂渠道 可追溯货源
IR
24+
TO-262
8866

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