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IPB1价格
参考价格：￥8.9501
型号：IPB100N04S2L-03 品牌：Infineon 备注：这里有IPB1多少钱，2024年最近7天走势，今日出价，今日竞价，IPB1批发/采购报价，IPB1行情走势销售排行榜，IPB1报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
isc N-Channel MOSFET Transistor FEATURES ·DrainCurrent:ID=100A@TC=25℃ ·DrainSourceVoltage :VDSS=100V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=4.8mΩ(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 |  |   | |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Halogen-freeaccordingtoIEC6124 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 |  | | |
OptiMOSTM3 Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoAECQ101 •Halogen-freeaccordingtoIEC61249-2-21 •Idealforhigh-frequency | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant;Halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant;Halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdeviceperformanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM) Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant;Halogenfree •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitch | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor Features •Forfastswitchingconvertersandsync.rectification •N-channelenhancement-logiclevel •175°Coperatingtemperature •Avalancherated •Pb-freeleadplating,RoHScompliant | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM 3 Linear FET, 200 V Features •Idealforhot-swapande-fuseapplications •Verylowon-resistanceRDS(on) •WidesafeoperatingareaSOA •N-channel,normallevel •100avalanchetested •Pb-freeplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplications •Halogen-freeaccordingtoIEC6 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor •FEATURES •WithTo-263(D2PAK)package •Lowinputcapacitanceandgatecharge •Lowgateinputresistance •100avalanchetested •MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation •APPLICATIONS •Switchingapplications | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS-T Power-Transistor Features •N-channel-Enhancementmode •AutomotiveAECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •Greenpackage(RoHScompliant) •UltralowRds(on) •100Avalanchetested | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor Features •N-channel-Enhancementmode •AECqualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •GreenProduct(RoHScompliant) •100Avalanchetested | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor Features •N-channel-Enhancementmode •AECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •GreenProduct(RoHScompliant) •100Avalanchetested | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor Features •N-channel-Enhancementmode •AECQ101qualified •MSL1upto260°Cpeakreflow •175°Coperatingtemperature •GreenProduct(RoHScompliant) •100Avalanchetested | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS3 Power-Transistor eatures •Idealforhighfrequencyswitching •OptimizedtechnologyforDC/DCconverters •ExcellentgatechargexRps(an)product(FOM) •N-channel,normallevel •100avalanchetested •Pb-freeplating:RoHScompliant ▪QualifiedaccordingtoJEDECfortargetapplications •Halogen-free | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS?? Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS?? Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS?? Power-Transistor Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •175°Coperatingtemperature •Pb-freeleadplating;RoHScompliant •QualifiedaccordingtoJEDEC1)fortargetapplication •Idealforhigh-frequencyswitchingandsynchr | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS2 Power-Transistor Features N-channel,normallevel •ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRps(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS2 Power-Transistor Features N-channel,normallevel •ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRps(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS2 Power-Transistor Features N-channel,normallevel •ExcellentgatechargexRos(on)product(FOM) •Verylowon-resistanceRps(on) •175°Coperatingtemperature •Pb-freeleadplating:RoHScompliant •QualifiedaccordingtoJEDECfortargetapplication •Idealforhigh-frequencyswitchingandsynchronous | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
P-Channel MOSFET FEATURES ·DrainCurrent-ID=-180A@TC=25℃ ·DrainSourceVoltage-VDSS=-40V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=2.8mΩ(Max)@VGS=-10V APPLICATIONS ·SwitchModePowerSupply ·UninterruptiblePowerSupply | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS Power-Transistor,-100V Features *p-channel *100avalanchetested *Nomallevel *Enhancementmode *Pb-freeleadplating;RoHScompliant *Halogen-freeaccordingtoIEC61249-2-21 | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor 文件：154.58 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor 文件：154.83 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T Power-Transistor 文件：202.3 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor 文件：165.32 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰-T2 Power-Transistor 文件：140.83 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰-T2 Power-Transistor 文件：140.83 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS Power-Transistor 文件：161.31 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS Power-Transistor 文件：161 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰-T Power-Transistor 文件：161.99 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor 文件：193.83 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor 文件：193.83 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T Power-Transistor 文件：168.91 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰-T Power-Transistor 文件：156.39 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor 文件：197.79 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T2 Power-Transistor 文件：197.79 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T Power-Transistor 文件：166.6 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor 文件：159.55 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰 Power-Transistor 文件：155.16 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-T Power-Transistor 文件：192.34 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰-T Power-Transistor 文件：411.38 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS-P Trench Power-Transistor 文件：196.96 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
isc N-Channel MOSFET Transistor 文件：244.58 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS 3 Power-Transistor 文件：739.46 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor 文件：696.05 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS 3 Power-Transistor 文件：739.46 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM3 Power-Transistor 文件：696.05 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor 文件：189.24 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS Buck converter series 文件：452.29 Kbytes Page：8 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS짰2 Power-Transistor 文件：205.32 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOSTM Power Transistor, -60 V 文件：939.62 Kbytes Page：11 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS3 Power-Transistor 文件：621.36 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
OptiMOS3 Power-Transistor 文件：303.76 Kbytes Page：10 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Metal Oxide Semiconductor Field Effect Transistor 文件：1.14456 Mbytes Page：12 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | | |
Isc N-Channel MOSFET Transistor 文件：188.91 Kbytes Page：2 Pages | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | | | |
OptiMOS짰2 Power-Transistor 文件：265.97 Kbytes Page：9 Pages | InfineonInfineon Technologies AG 英飞凌英飞凌科技公司 | | |
IPB1产品属性
- 类型
描述
- 型号
IPB1
- 制造商
Eaton Corporation
- 功能描述
FD BARRIER
- 制造商
Omron Corporation
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
6000 |
原装现货正品 |
|||
原装 |
24+ |
标准 |
49387 |
热卖原装进口 |
|||
INFINEO |
2020+ |
TO-263 |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON/英飞凌 |
24+ |
TO263 |
58000 |
全新原厂原装正品现货,可提供技术支持、样品免费! |
|||
Infineon/英飞凌 |
21+ |
PG-TO263-3 |
8800 |
公司只作原装正品 |
|||
INFINEON/英飞凌 |
23+ |
NA/ |
3460 |
原装现货,当天可交货,原型号开票 |
|||
Infineon(英飞凌) |
23+ |
TO-263 |
8498 |
支持大陆交货,美金交易。原装现货库存。 |
|||
INFINEON/英飞凌 |
22+ |
TO-263 |
89907 |
||||
INFINEON/英飞凌 |
13+ |
TO-263 |
315 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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IPB1数据表相关新闻
IPB107N20N3G绝对全新原装特价销售
IPB107N20N3G绝对全新原装特价销售
2022-10-27IPB036N12N3GATMA1
原装正品现货
2022-6-2IPB025N10N3G 原厂原装 正品现货MOSFET N-Ch 100V 180A D2PAK-6 OptiMOS 3
只做原装支持实单价格优势有单必成
2022-5-12IPB120N04S4-02 只做原装
进口原装现货假一罚十特价出售
2022-4-25IPB042N10N3G
IPB042N10N3G，当天发货0755-82732291全新原装现货或门市自取.
2020-10-29IPB107N20N3G百诺芯原装现货
IPB107N20N3G百诺芯原装现货
2019-3-27
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