isc N-Channel MOSFET Transistor

FEATURES ·Drain Current : ID= 100A@ TC=25℃ ·Drain Source Voltage : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 4.8mΩ(Max) @ VGS= 10V ·100 avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·motor drive

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC for target application • Halogen-free according to IEC6124

OptiMOSTM3 Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 • Halogen-free according to IEC61249-2-21 • Ideal for high-frequency

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

OptiMOSTM3 Power-Transistor Features Excellent gate charge x R DS(on) product (FOM)

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant; Halogen free • Qualified according to JEDEC1) for target application • Ideal for high-frequency switch

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

OptiMOSTM 3 Linear FET, 200 V

Features • Ideal for hot-swap and e-fuse applications • Very low on-resistance RDS(on) • Wide safe operating area SOA • N-channel, normal level • 100 avalanche tested • Pb-free plating; RoHS compliant • Qualified according to JEDEC1) for target applications • Halogen-free according to IEC6

Isc N-Channel MOSFET Transistor

• FEATURES • With To-263(D2PAK) package • Low input capacitance and gate charge • Low gate input resistance • 100 avalanche tested • Minimum Lot-to-Lot variations for robust device performance and reliable operation • APPLICATIONS • Switching applications

OptiMOS-T Power-Transistor

Features • N-channel - Enhancement mode • Automotive AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green package (RoHS compliant) • Ultra low Rds(on) • 100 Avalanche tested

OptiMOS-T2 Power-Transistor

Features • N-channel - Enhancement mode • AEC qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

N-Channel MOSFET Transistor

FEATURES · Drain Current -ID= 120A@ TC=25℃ · Drain Source Voltage -VDSS= 60V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= 10V APPLICATIONS · Switch Mode Power Supply

OptiMOS-T2 Power-Transistor

Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

OptiMOS-T2 Power-Transistor

Features • N-channel - Enhancement mode • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) • 100 Avalanche tested

MOSFET OptiMOS™ 6 Power‑Transistor, 120 V

Features • N‑channel, normal level • Very low on‑resistance RDS(on) • Excellent gate charge x RDS(on) product (FOM) • Very low reverse recovery charge (Qrr) • High avalanche energy rating • 175°C operating temperature • Optimized for high frequency switching • Pb‑free lead plating; RoHS co

OptiMOS3 Power-Transistor

eatures • Ideal for high frequency switching • Optimized technology for DC/DC converters • Excellent gate charge x Rps(an) product (FOM) • N-channel, normal level • 100 avalanche tested • Pb-free plating: RoHS compliant ▪ Qualified according to JEDEC for target applications • Halogen-free

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

OptiMOS?? Power-Transistor

Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchr

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

OptiMOS2 Power-Transistor

Features N-channel, normal level • Excellent gate charge x Ros(on) product (FOM) • Very low on-resistance Rps(on) • 175 °C operating temperature • Pb-free lead plating: RoHS compliant • Qualified according to JEDEC for target application • Ideal for high-frequency switching and synchronous

isc N-Channel MOSFET Transistor

FEATURES · Drain Current -ID=17A@ TC=25℃ · Drain Source Voltage -VDSS=250V(Min) · Static Drain-Source On-Resistance -RDS(on) = 100mΩ(Max)@VGS= 10V DESCRIPTION · Motor drive, DC-DC converter, power switch and solenoid drive.

P-Channel MOSFET

FEATURES · Drain Current -ID= -180A@ TC=25℃ · Drain Source Voltage -VDSS= -40V(Min) · Static Drain-Source On-Resistance -RDS(on) = 2.8mΩ(Max)@VGS= -10V APPLICATIONS · Switch Mode Power Supply · Uninterruptible Power Supply

OptiMOS Power-Transistor,-100V

Features *p-channel *100 avalanche tested *Nomal level *Enhancement mode *Pb-free lead plating; RoHS compliant *Halogen-free according to IEC61249-2-21

OptiMOS짰 Power-Transistor

文件：154.58 Kbytes Page：8 Pages

MOSFET N-CH 40V 100A TO263-3

40 V、N 沟道、3 mΩ（最大值）、汽车 MOSFET、D2PAK、OptiMOS ™

OptiMOS짰 Power-Transistor

文件：154.83 Kbytes Page：8 Pages

OptiMOS-T Power-Transistor

文件：202.3 Kbytes Page：9 Pages

40 V、N 沟道、最大 2.5 mΩ、汽车 MOSFET、D2PAK、OptiMOS ™ -T

OptiMOS-T2 Power-Transistor

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OptiMOS짰-T2 Power-Transistor

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OptiMOS짰-T2 Power-Transistor

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OptiMOS Power-Transistor

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OptiMOS Power-Transistor

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OptiMOS짰-T Power-Transistor

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OptiMOS-T2 Power-Transistor

文件：193.83 Kbytes Page：9 Pages

OptiMOS-T2 Power-Transistor

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OptiMOS-T Power-Transistor

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OptiMOS짰-T Power-Transistor

文件：156.39 Kbytes Page：8 Pages

OptiMOS-T2 Power-Transistor

文件：197.79 Kbytes Page：9 Pages

OptiMOS-T2 Power-Transistor

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OptiMOS-T Power-Transistor

文件：166.6 Kbytes Page：8 Pages

OptiMOS짰 Power-Transistor

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OptiMOS짰 Power-Transistor

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OptiMOS-T Power-Transistor

文件：192.34 Kbytes Page：9 Pages

OptiMOS-T Power-Transistor

文件：192.34 Kbytes Page：9 Pages

OptiMOS짰-T Power-Transistor

文件：411.38 Kbytes Page：9 Pages

OptiMOS-P Trench Power-Transistor

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isc N-Channel MOSFET Transistor

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OptiMOS 3 Power-Transistor

文件：739.46 Kbytes Page：11 Pages

OptiMOSTM3 Power-Transistor

文件：696.05 Kbytes Page：11 Pages

OptiMOS 3 Power-Transistor

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OptiMOSTM3 Power-Transistor

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Isc N-Channel MOSFET Transistor

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OptiMOS Buck converter series

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