位置:首页 > IC中文资料第474页 > IPB110N06L
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 | 
|---|---|---|---|---|
IPB110N06L  | OptiMOS짰 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant  | Infineon 英飞凌  | ||
OptiMOS짰 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant  | Infineon 英飞凌  | |||
OptiMOS짰 Power-Transistor Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant  | Infineon 英飞凌  | |||
MOSFET N-CH 60V 78A TO-263  | Infineon 英飞凌  | |||
N-Channel Enhancement Mode Power MOSFET Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters  | GOFORD 谷峰半导体  | |||
N-Channel Enhancement Mode Power MOSFET Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters  | GOFORD 谷峰半导体  | |||
N-Channel Enhancement Mode Power MOSFET Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters  | GOFORD 谷峰半导体  | |||
N-Channel Enhancement Mode Power MOSFET Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters  | GOFORD 谷峰半导体  | |||
N-Channel 60-V (D-S) MOSFET 文件:2.10135 Mbytes Page:7 Pages  | VBSEMI 微碧半导体  | 
IPB110N06L产品属性
- 类型
描述
 - 型号
IPB110N06L
 - 功能描述
MOSFET N-CH 60V 78A
 - RoHS
否
 - 制造商
STMicroelectronics
 - 晶体管极性
N-Channel
 - 汲极/源极击穿电压
650 V
 - 闸/源击穿电压
25 V
 - 漏极连续电流
130 A 电阻汲极/源极
 - RDS(导通)
0.014 Ohms
 - 配置
Single
 - 安装风格
Through Hole
 - 封装/箱体
Max247
 - 封装
Tube
 
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 | 
|---|---|---|---|---|---|---|---|
INFINE0N  | 
21+  | 
D2PAK (TO-263)  | 
32568  | 
100%进口原装!长期供应!绝对优势价格(诚信经营  | 
|||
INFINEON/英飞凌  | 
2450+  | 
PG-TO263-3  | 
9850  | 
只做原厂原装正品现货或订货假一赔十!  | 
|||
INFINEON  | 
24+  | 
D2PAK(TO-263)  | 
8866  | 
||||
INFINEON/英飞凌  | 
24+  | 
PG-TO263-3  | 
42000  | 
只做原装进口现货  | 
|||
INFINEON/英飞凌  | 
23+  | 
TO-263  | 
43000  | 
原厂授权一级代理,专业海外优势订货,价格优势、品种  | 
|||
INFINEON  | 
24+  | 
TO-263  | 
90000  | 
一级代理商进口原装现货、价格合理  | 
|||
Infineon(英飞凌)  | 
25+  | 
封装  | 
500000  | 
源自原厂成本,高价回收工厂呆滞  | 
|||
INFINEON  | 
23+  | 
TO-263  | 
8000  | 
只做原装现货  | 
|||
INFINEON  | 
23+  | 
TO-263  | 
7000  | 
||||
INFINE0N  | 
23+  | 
TO-263  | 
11846  | 
一级代理商现货批发,原装正品,假一罚十  | 
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IPB110N06L规格书下载地址
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