型号 功能描述 生产厂家 企业 LOGO 操作
IPB110N06L

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

Infineon

英飞凌

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

Infineon

英飞凌

OptiMOS짰 Power-Transistor

Features • For fast switching converters and sync. rectification • N-channel enhancement - logic level • 175 °C operating temperature • Avalanche rated • Pb-free lead plating, RoHS compliant

Infineon

英飞凌

MOSFET N-CH 60V 78A TO-263

Infineon

英飞凌

N-Channel Enhancement Mode Power MOSFET

Description The G110N06K uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G110N06KA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G110N06T uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel Enhancement Mode Power MOSFET

Description The G110N06TA uses advanced trench technology to provide excellent RDS(ON) , low gate charge. It can be used in a wide variety of applications. AEC-Q101 Qualified Application l Power switch l DC/DC converters

GOFORD

谷峰半导体

N-Channel 60-V (D-S) MOSFET

文件:2.10135 Mbytes Page:7 Pages

VBSEMI

微碧半导体

IPB110N06L产品属性

  • 类型

    描述

  • 型号

    IPB110N06L

  • 功能描述

    MOSFET N-CH 60V 78A

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2025-11-4 16:44:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
INFINE0N
21+
D2PAK (TO-263)
32568
100%进口原装!长期供应!绝对优势价格(诚信经营
INFINEON/英飞凌
2450+
PG-TO263-3
9850
只做原厂原装正品现货或订货假一赔十!
INFINEON
24+
D2PAK(TO-263)
8866
INFINEON/英飞凌
24+
PG-TO263-3
42000
只做原装进口现货
INFINEON/英飞凌
23+
TO-263
43000
原厂授权一级代理,专业海外优势订货,价格优势、品种
INFINEON
24+
TO-263
90000
一级代理商进口原装现货、价格合理
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
INFINEON
23+
TO-263
8000
只做原装现货
INFINEON
23+
TO-263
7000
INFINE0N
23+
TO-263
11846
一级代理商现货批发,原装正品,假一罚十

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