OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

OptiMOS 2Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

OptiMOS 2Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

MOSFET N-CH 25V 50A D2PAK

OptiMOS®2 Power-Transistor

OptiMOS®2 Power-Transistor

25V N-Channel Enhancement Mode MOSFET

FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current

N-Channel 30-V (D-S) MOSFET

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N-Channel 30-V (D-S) MOSFET

文件：1.73664 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.77236 Mbytes Page：8 Pages

N-Channel 30-V (D-S) MOSFET

文件：1.73665 Mbytes Page：8 Pages