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| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPB09N03LA | OptiMOS 2 Power-Transistor Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the | Infineon 英飞凌 |   | |
OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated | Infineon 英飞凌 | | ||
OptiMOS 2Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated | Infineon 英飞凌 | | ||
OptiMOS 2Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated | Infineon 英飞凌 | | ||
25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current | PANJIT 強茂 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77212 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73664 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77236 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73665 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
IPB09N03LA产品属性
- 类型
描述
- 型号
IPB09N03LA
- 功能描述
MOSFET N-CH 25V 50A D2PAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
OptiMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
24+ |
NA/ |
120 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
INFINEON |
21+ |
TO263 |
10000 |
原装现货假一罚十 |
|||
INFINEON |
15+ |
TO-263 |
370 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
INFINEON/英飞凌 |
25+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
|||
INFINEON/英飞凌 |
25+ |
TO263 |
15620 |
INFINEON/英飞凌全新特价IPB09N03LA即刻询购立享优惠#长期有货 |
|||
INFINEON |
24+/25+ |
545 |
原装正品现货库存价优 |
||||
INFINEON |
24+ |
TO263 |
20000 |
全新原厂原装，进口正品现货，正规渠道可含税！！ |
|||
infineon |
1822+ |
TO-263 |
9852 |
只做原装正品假一赔十为客户做到零风险!! |
|||
INFINEON/英飞凌 |
25+ |
TO-263 |
9300 |
全新原装正品支持含税 |
|||
Infineon Technologies |
21+ |
PG-TO263-3-2 |
1000 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
IPB09N03LA规格书下载地址
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