位置：首页 > IC中文资料第5081页 > IPF09N03LA
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
IPF09N03LA | OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 |   | |
IPF09N03LA | OptiMOS 2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | |
IPF09N03LA | OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | |
OptiMOS짰2 Power-Transistor Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant | Infineon 英飞凌 | | ||
25V N-Channel Enhancement Mode MOSFET FEATURES • RDS(ON), VGS@10V,IDS@30A=9mΩ • RDS(ON), VGS@4.5V,IDS@30A=12mΩ • Advanced trench process technology • High Density Cell Design For Uitra Low On-Resistance • Specially Designed for DC/DC Converters and Motor Drivers • Fully Characterized Avalanche Voltage and Current | PANJIT 強茂 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77212 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73664 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.77236 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | | ||
N-Channel 30-V (D-S) MOSFET 文件：1.73665 Mbytes Page：8 Pages | VBSEMI 微碧半导体 | |
IPF09N03LA产品属性
- 类型
描述
- 型号
IPF09N03LA
- 功能描述
MOSFET N-CH 25V 50A DPAK
- RoHS
否
- 类别
分离式半导体产品 >> FET - 单
- 系列
OptiMOS™
- 标准包装
1,000
- 系列
MESH OVERLAY™ FET
- 型
MOSFET N 通道，金属氧化物 FET
- 特点
逻辑电平门
- 漏极至源极电压(Vdss)
200V 电流 - 连续漏极(Id) @ 25°
- C
18A 开态Rds（最大）@ Id, Vgs @ 25°
- C
180 毫欧 @ 9A，10V Id 时的
- Vgs(th)（最大）
4V @ 250µA 闸电荷(Qg) @
- Vgs
72nC @ 10V 输入电容(Ciss) @
- Vds
1560pF @ 25V 功率 -
- 最大
40W
- 安装类型
通孔
- 封装/外壳
TO-220-3 整包
- 供应商设备封装
TO-220FP
- 包装
管件
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
INTERSIL |
24+ |
NA/ |
3861 |
原装现货,当天可交货,原型号开票 |
|||
VB |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
|||
INFINEON/英飞凌 |
22+ |
SOT-252-3 |
100000 |
代理渠道/只做原装/可含税 |
|||
INFINEON |
24+/25+ |
19 |
原装正品现货库存价优 |
||||
Infineon Technologies |
21+ |
P-TO252-3 |
2500 |
100%进口原装!长期供应!绝对优势价格(诚信经营)! |
|||
Infineon(英飞凌) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
I |
22+ |
TO-252 |
25000 |
只做原装进口现货,专注配单 |
|||
INFINEON |
24+ |
SOT-252 |
82500 |
||||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
Infineon |
2025+ |
TO-252-2 |
5425 |
全新原厂原装产品、公司现货销售 |
IPF09N03LA规格书下载地址
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