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型号 功能描述 生产厂家 企业 LOGO 操作
IPB09N03LAG

OptiMOS짰2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

INFINEON

英飞凌

IPB09N03LAG

OptiMOS 2Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1)for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior thermal resistance • 175 °C operating temperature • dv/dtrated

INFINEON

英飞凌

IPB09N03LAG

OptiMOS®2 Power-Transistor

INFINEON

英飞凌

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

OptiMOS 2 Power-Transistor

Features • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC1) for target application • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Superior thermal resistance • 175 °C operating temperature • Pb-free lead plating; RoHS compliant

INFINEON

英飞凌

丝印代码:09N03LA;OptiMOS 2 Power-Transistor

Type : IPB09N03LAG Package : PG-TO263-3-2 Marking : 09N03LA • Ideal for high-frequency dc/dc converters • Qualified according to JEDEC for target applications • N-channel - Logic level • Excellent gate charge x RDS(on)product (FOM) • Very low on-resistance RDS(on) • Superior the

INFINEON

英飞凌

IPB09N03LAG产品属性

  • 类型

    描述

  • 型号

    IPB09N03LAG

  • 功能描述

    MOSFET N-Channel MOSFET 20-200V

  • RoHS

  • 制造商

    STMicroelectronics

  • 晶体管极性

    N-Channel

  • 汲极/源极击穿电压

    650 V

  • 闸/源击穿电压

    25 V

  • 漏极连续电流

    130 A 电阻汲极/源极

  • RDS(导通)

    0.014 Ohms

  • 配置

    Single

  • 安装风格

    Through Hole

  • 封装/箱体

    Max247

  • 封装

    Tube

更新时间:2026-5-17 16:38:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
infineon
25+
TO-263
4500
全新原装、诚信经营、公司现货销售
INFINEON
24+
D2PAK(TO-263)
8866
INFINEON
17+
TO-263
6200
100%原装正品现货
INFINEON
26+
SOT-223-3
86720
全新原装正品价格最实惠 假一赔百
INFINEON
23+
7000
infineon
22+
TO263-2
20000
公司只做原装 品质保障
Infineon(英飞凌)
25+
封装
500000
源自原厂成本,高价回收工厂呆滞
INFINEON
20+
TO220
36900
原装优势主营型号-可开原型号增税票
INFINEON
0501+
TO263
100
一级代理,专注军工、汽车、医疗、工业、新能源、电力
Infineon
原厂封装
9800
原装进口公司现货假一赔百

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