HY57V561620C芯片数据手册市场行情分销商Hynix-IC资料网

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型号	功能描述	生产厂家企业	LOGO
HY57V561620C	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620	4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po	Hynix 海力士	Hynix
HY57V561620CLT-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620C(L)T(P)-K(I)	SDRAM - 256Mb	Hynix 海力士	Hynix
HY57V561620CLT-H	4 Banks x 4M x 16Bit Synchronous DRAM	Hynix 海力士	Hynix
HY57V561620CTP	4 Banks x 4M x 16Bit Synchronous DRAM	Hynix 海力士	Hynix
HY57V561620B	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620BLT-HI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620BLT-KI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620BLT-PI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix

HY57V561620C产品属性

类型
描述
型号
HY57V561620C
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620C供应商更多...

更新时间：2025-11-18 3:27:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市英卓尔科技有限公司	HY57V561620CTP-7	HYNIX	20+	TSSOP	2960	诚信交易大量库存现货	询价
深圳市得捷芯城科技有限公司	HY57V561620CT-7	HYNIX	24+	NA/	5196	原装现货,当天可交货,原型号开票	询价
深圳市凌旭科技有限公司	HY57V561620CLTP-H	HYNIX	2016+	TSOP	5000	全新原装现货,只售原装,假一赔十!	询价
上海意淼电子科技有限公司	HY57V561620CTPHI	HY	23+	NA	12000	全新原装假一赔十	询价
深圳市粤骏腾电子科技有限公司	HY57V561620CT	HY	24+	TSSOP54	100	大批量供应优势库存热卖	询价
深圳市金芯世纪电子有限公司	HY57V561620CTP-H	HYNIX/海力士	22+	TSOP	100000	代理渠道/只做原装/可含税	询价
深圳市科芯源微电子有限公司	HY57V561620CT-HI	HYNIX/海力士	25+	TSOP54	54658	百分百原装现货实单必成	询价
深圳市明嘉莱科技有限公司	HY57V561620CTP-H	HYNIX	24+	TSSOP-54	159256	明嘉莱只做原装正品现货	询价
中天科工半导体（深圳）有限公司	HY57V561620CT-H	HYNIX/海力士	25+	TSSOP	32360	HYNIX/海力士全新特价HY57V561620CT-H即刻询购立享优惠#长期有货	询价
深圳市威雅利发展有限公司	HY57V561620CTP-H	CYPRESS	0325+	TSOP	22	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

HY57V561620C芯片相关品牌

HY57V561620C规格书下载地址

HY57V561620C参数引脚图相关

HY57V561620C数据表相关新闻

HY3208
HY3208 ，全新原装当天发货或门市自取0755-82732291.
2019-9-24
HY3208P
HY3208P ，全新原装当天发货或门市自取0755-82732291.
2019-9-24
HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25

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HY57V561620C产品属性

HY57V561620C供应商更多...

HY57V561620C芯片相关品牌

HY57V561620C规格书下载地址

HY57V561620C参数引脚图相关

HY57V561620C数据表相关新闻

HY3208

HY3208P

HY57V561620FTP-HI公司原装正品现货/随时可以发货

HY57V641620ETP-6公司原装正品现货/随时可以发货

HY57V561620FTP-6公司原装正品现货/随时可以发货

HY3912W

DdatasheetPDF页码索引