HY57V561620C芯片数据手册市场行情分销商Hynix-IC资料网

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型号	功能描述	生产厂家企业	LOGO
HY57V561620C	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620	4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po	Hynix 海力士	Hynix
HY57V561620CLT-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLTP-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CLT-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CTP-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620CT-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620C(L)T(P)-K(I)	SDRAM - 256Mb	Hynix 海力士	Hynix
HY57V561620CLT-H	4 Banks x 4M x 16Bit Synchronous DRAM	Hynix 海力士	Hynix
HY57V561620CTP	4 Banks x 4M x 16Bit Synchronous DRAM	Hynix 海力士	Hynix
HY57V561620B	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620BLT-HI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620BLT-KI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix
HY57V561620BLT-PI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	Hynix 海力士	Hynix

HY57V561620C产品属性

类型
描述
型号
HY57V561620C
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620C供应商更多...

更新时间：2025-9-30 15:50:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市华康联电子科技有限公司	HY57V561620CT-H	HY	23+	TSSOP	98900	原厂原装正品现货!!	询价
深圳市亿联芯电子科技有限公司	HY57V561620CT-H	HYNIX/海力士	2023+	TSOP54	8635	全新原装正品,优势价格	询价
深圳市福田区绿盛电子商行	HY57V561620CT-H	HYNIX	2015+	SOP/DIP	19889	一级代理原装现货,特价热卖!	询价
深圳市美思瑞电子科技有限公司	HY57V561620CTP-H	HYNIX/海力士	22+	TSOP54	9565		询价
深圳市科恒伟业电子有限公司	HY57V561620CLT-HI	HYNIX	24+	TSOP54	8500	只做原装正品假一赔十为客户做到零风险!!	询价
深圳市赛美科科技有限公司	HY57V561620CTP-H	HYUNDAI		TSOP	68500	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市昌和盛利电子有限公司	HY57V561620CTP-H	TOS	NEW	WSO-18	9526	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
齐创科技(上海,北京,青岛)有限公司	HY57V561620CTP-H	HYNIX	23+	TSOP54	5000	原装正品,假一罚十	询价
深圳市英科美电子有限公司	HY57V561620CTP-H	HYNIX	2223+	TSOP54	26800	只做原装正品假一赔十为客户做到零风险	询价
深圳市科芯源微电子有限公司	HY57V561620CT-HI	HYNIX/海力士	25+	TSOP54	54658	百分百原装现货实单必成	询价

HY57V561620C芯片相关品牌

HY57V561620C规格书下载地址

HY57V561620C参数引脚图相关

HY57V561620C数据表相关新闻

HY3208
HY3208 ，全新原装当天发货或门市自取0755-82732291.
2019-9-24
HY3208P
HY3208P ，全新原装当天发货或门市自取0755-82732291.
2019-9-24
HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25

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HY57V561620C产品属性

HY57V561620C供应商更多...

HY57V561620C芯片相关品牌

HY57V561620C规格书下载地址

HY57V561620C参数引脚图相关

HY57V561620C数据表相关新闻

HY3208

HY3208P

HY57V561620FTP-HI公司原装正品现货/随时可以发货

HY57V641620ETP-6公司原装正品现货/随时可以发货

HY57V561620FTP-6公司原装正品现货/随时可以发货

HY3912W

DdatasheetPDF页码索引