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型号	功能描述	生产厂家企业	LOGO
HY57V561620C	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620	4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po	HYNIX 海力士	HYNIX
HY57V561620CLT-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLT-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLT-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLT-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLT-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLT-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLTP-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CLT-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-6	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-7	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-8	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-H	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-K	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-P	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CTP-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620CT-S	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620C(L)T(P)-K(I)	SDRAM - 256Mb	HYNIX 海力士	HYNIX
HY57V561620CLT-H	4 Banks x 4M x 16Bit Synchronous DRAM	HYNIX 海力士	HYNIX
HY57V561620CTP	4 Banks x 4M x 16Bit Synchronous DRAM	HYNIX 海力士	HYNIX
HY57V561620B	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620BLT-HI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620BLT-KI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX
HY57V561620BLT-PI	4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a	HYNIX 海力士	HYNIX

HY57V561620C产品属性

类型
描述
型号
HY57V561620C
制造商
HYNIX
制造商全称
Hynix Semiconductor
功能描述
4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620C供应商更多...

更新时间：2026-1-30 17:41:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市宏世佳电子科技有限公司	HY57V561620CLT-HI	HYNIX	2025+	TSOP	3615	全新原厂原装产品、公司现货销售	询价
深圳市科恒伟业电子有限公司	HY57V561620CLT-HI	HYNIX	24+	TSOP54	8500	只做原装正品假一赔十为客户做到零风险!!	询价
中天科工半导体（深圳）有限公司	HY57V561620CT-H	HYNIX/海力士	25+	TSSOP	32360	HYNIX/海力士全新特价HY57V561620CT-H即刻询购立享优惠#长期有货	询价
千层芯半导体(深圳)有限公司	HY57V561620CT	HY	24+	SMD	20000	一级代理原装现货假一罚十	询价
深圳市英科美电子有限公司	HY57V561620CLTP-H	HYNIX/海力士	2425+	TSOP	18800	只做原装正品,每一片都来自原厂	询价
深圳市明嘉莱科技有限公司	HY57V561620CTP-H	HYNIX	24+	TSSOP-54	159256	明嘉莱只做原装正品现货	询价
深圳市中飞凌科技有限公司	HY57V561620CTP-H	HYNIX	26+	TSSOP	360000	只做原装,请来电咨询	询价
深圳市凌旭科技有限公司	HY57V561620CLTP-H	HYNIX	2016+	TSOP	5000	全新原装现货,只售原装,假一赔十!	询价
深圳市威雅利发展有限公司	HY57V561620CLT-HI	HYNIX	0928+	TSOP54	17	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市能创芯电子科技有限公司	HY57V561620CLTP-H	HY	23+	TSOP54	3500		询价

HY57V561620C芯片相关品牌

HY57V561620C规格书下载地址

HY57V561620C参数引脚图相关

HY57V561620C数据表相关新闻

HY3208
HY3208 ，全新原装当天发货或门市自取0755-82732291.
2019-9-24
HY3208P
HY3208P ，全新原装当天发货或门市自取0755-82732291.
2019-9-24
HY57V561620FTP-HI公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V641620ETP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY57V561620FTP-6公司原装正品现货/随时可以发货
瀚佳科技(深圳)有限公司专业为工厂一站式BOM配单服务
2019-4-21
HY3912W
HY3912W，全新原装当天发货或门市自取0755-82732291.
2019-2-25

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HY57V561620C产品属性

HY57V561620C供应商更多...

HY57V561620C芯片相关品牌

HY57V561620C规格书下载地址

HY57V561620C参数引脚图相关

HY57V561620C数据表相关新闻

HY3208

HY3208P

HY57V561620FTP-HI公司原装正品现货/随时可以发货

HY57V641620ETP-6公司原装正品现货/随时可以发货

HY57V561620FTP-6公司原装正品现货/随时可以发货

HY3912W

DdatasheetPDF页码索引