型号 功能描述 生产厂家&企业 LOGO 操作
HY57V561620C

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

TheHY57V561620Tisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620isorganizedas4banksof4,194,304x16. TheHY57V561620Tisofferingfullysynchronousoperationreferencedtoapo

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Cisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Cisorganizedas4banksof4,194,304x16. HY57V561620Cisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

4Banksx4Mx16BitSynchronousDRAM

DESCRIPTION TheHY57V561620Bisa268,435,456bitCMOSSynchronousDRAM,ideallysuitedforthemainmemoryapplicationswhichrequirelargememorydensityandhighbandwidth.HY57V561620Bisorganizedas4banksof4,194,304x16. HY57V561620Bisofferingfullysynchronousoperationreferencedtoa

HynixHynix Semiconductor

海力士海力士半导体

Hynix

HY57V561620C产品属性

  • 类型

    描述

  • 型号

    HY57V561620C

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4 Banks x 4M x 16Bit Synchronous DRAM

更新时间:2025-8-4 23:00:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HYNIX
24+
NA/
5196
原装现货,当天可交货,原型号开票
HYNIX
2016+
TSOP
5000
全新原装现货,只售原装,假一赔十!
HY
23+
NA
12000
全新原装假一赔十
HYNIX/海力士
25+
TSSOP
32360
HYNIX/海力士全新特价HY57V561620CT-H即刻询购立享优惠#长期有货
HOOYI(西安后羿)
23+
NA
6800
原装正品,力挺实单
HYNIX/海力士
25+
TSOP54
54658
百分百原装现货 实单必成
HYNIX/海力士
22+
TSOP
100000
代理渠道/只做原装/可含税
HYNIX
24+
TSSOP
2000
全新原装深圳仓库现货有单必成
HYNIX
24+
TSSOP-54
159256
明嘉莱只做原装正品现货
HYNIX
24+
TSOP54
8500
只做原装正品假一赔十为客户做到零风险!!

HY57V561620C芯片相关品牌

  • CHENDA
  • FRANCEJOINT
  • HARWIN
  • IRF
  • Ricoh
  • SCHURTER
  • Semikron
  • Sensata
  • SICK
  • SKYWORKS
  • TDK
  • TOCOS

HY57V561620C数据表相关新闻