您好,欢迎来到114ic资料网！

芯片资料
  • 数据手册
  • 丝印反查
  • 库存查询
  • 行业新闻
  • 生产厂家
  • 替换型号
  • 晶体管

位置：首页 > IC中文资料第5677页 > HY57V561620CTP

型号 功能描述 生产厂家 企业 LOGO 操作
HY57V561620CTP

4 Banks x 4M x 16Bit Synchronous DRAM

Hynix

海力士

HY57V561620

4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po

Hynix

海力士

HY57V561620CTP-6

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP-7

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP-8

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP-H

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP-K

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP-P

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP-S

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620B

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BLT-HI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BLT-KI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620BLT-PI

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CTP产品属性

  • 类型

    描述

  • 型号

    HY57V561620CTP

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4 Banks x 4M x 16Bit Synchronous DRAM

HY57V561620CTP供应商更多...

更新时间：2025-9-30 17:23:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
深圳市益百分电子有限公司
HY57V561620CTP
HYNIX
14+
TSOP54
150
原装现货价格有优势量大可以发货
询价
深圳市昌和盛利电子有限公司
HY57V561620CTP-H
TOS
NEW
WSO-18
9526
代理全系列销售,全新原装正品,价格优势,长期供应,量大可订
询价
谛辉(北京/上海/青岛 )电子科技有限公司
HY57V561620CTP-H
HYNIX
25+
LQFP80
18000
原厂直接发货进口原装
询价
深圳市力拓辉电子有限公司
HY57V561620CTP-H
HYNIX
22+
TSOP
5000
只做原装,假一赔十
询价
深圳市明嘉莱科技有限公司
HY57V561620CTP-H
HYNIX
24+
TSSOP-54
159256
明嘉莱只做原装正品现货
询价
深圳市恒达亿科技有限公司
HY57V561620CTP-H
HYNIX
25+
TSOP
3000
全新原装、诚信经营、公司现货销售
询价
深圳市一线半导体有限公司
HY57V561620CTP-H
24+
TSSOP
869
询价
深圳市向鸿伟业电子有限公司
HY57V561620CTP-H
HYNIX
2402+
TSOP54
8324
原装正品!实单价优!
询价
深圳市东来宝电子科技有限公司
HY57V561620CTP-H
HYNIX
24+
TSOP54
37279
郑重承诺只做原装进口现货
询价
深圳市恒创达实业有限公司
HY57V561620CTP-H
HYNIX
17+
TSOP
6200
100%原装正品现货
询价

HY57V561620CTP芯片相关品牌

HY57V561620CTP规格书下载地址

HY57V561620CTP参数引脚图相关

HY57V561620CTP数据表相关新闻

DdatasheetPDF页码索引

新数据|IC资料索引|IC关键词|IC库存|IC中文资料|关于我们|联系我们

Copyright © 2003-2025 www.114ic.cn All Rights Reserved 网站备案: 粤ICP备05011613号 粤公网安备 44030402000933号

声明：本站所有资料均来自互联网及网友提供，仅供学习和研究使用，无任何商业目的，版权归原作如有侵权请联系QQ：303638005，本站马上更正

字母索引：ABCDEFGHIJKLMNOPQRSTUVWXYZ0123456789

深圳市市场监督管理局企业主体身份公示