型号 功能描述 生产厂家&企业 LOGO 操作
HY57V561620CLT-P

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a

Hynix

海力士

4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620CLT-P产品属性

  • 类型

    描述

  • 型号

    HY57V561620CLT-P

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4 Banks x 4M x 16Bit Synchronous DRAM

更新时间:2025-8-17 16:30:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HY
24+
SMD
20000
一级代理原装现货假一罚十
HYNIX
24+
SOP
7
TSOP54
25+
HY
12588
原装正品,自己库存 假一罚十
HY
2447
SMD
100500
一级代理专营品牌!原装正品,优势现货,长期排单到货
HYNIX
23+
TSOP
8000
专注配单,只做原装进口现货
HYNIX
23+
TSOP
7000
HY
638
原装正品
HY
14+
TSOP54
28
一级代理,专注军工、汽车、医疗、工业、新能源、电力
HY
2020+
TSOP54
133
百分百原装正品 真实公司现货库存 本公司只做原装 可
HYNIX
SOP
1090
优势库存

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