位置:首页 > IC中文资料第5700页 > HY57V561620CTP-P
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620CTP-P | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a | Hynix 海力士 | ||
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | |||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 |
HY57V561620CTP-P产品属性
- 类型
描述
- 型号
HY57V561620CTP-P
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX/海力士 |
24+ |
TSSOP |
12000 |
原装正品 有挂就有货 |
|||
HYNIX |
06+ |
TSOP54 |
258 |
原装现货 |
|||
HYNIX |
20+ |
TSOP54 |
2960 |
诚信交易大量库存现货 |
|||
HYNIX |
22+ |
TSOP |
5000 |
全新原装现货!价格优惠!可长期 |
|||
HYNIX |
19+ |
TSOP |
9600 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
25+ |
TSOP54 |
880000 |
明嘉莱只做原装正品现货 |
|||
HY |
25+ |
SOP |
3200 |
全新原装、诚信经营、公司现货销售 |
|||
HYNIX |
23+ |
TSOP |
12800 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
|||
HYNIX |
2025+ |
TSSOP54 |
3768 |
全新原厂原装产品、公司现货销售 |
|||
HYNIX |
25+ |
TSOP |
9600 |
主营内存芯片 全新原装正品 |
HY57V561620CTP-P芯片相关品牌
HY57V561620CTP-P规格书下载地址
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HY57V561620CTP-P数据表相关新闻
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2019-2-25
DdatasheetPDF页码索引
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