位置：首页 > IC中文资料第5903页 > HY57V561620CLT-K
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620CLT-K | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620CLT-K产品属性
- 类型
描述
- 型号
HY57V561620CLT-K
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
2023+ |
TSOP |
1146 |
一级代理优势现货,全新正品直营店 |
|||
HYNIX/海力士 |
22+ |
TSOP |
12245 |
现货,原厂原装假一罚十! |
|||
HY |
2447 |
SMD |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HYNIX |
23+ |
TSOP |
7000 |
||||
HY |
638 |
原装正品 |
|||||
HYNIX |
24+ |
SOP |
7 |
||||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
HY |
14+ |
TSOP54 |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HYNIX |
2025+ |
TSOP |
3615 |
全新原厂原装产品、公司现货销售 |
|||
HY |
24+ |
NA/ |
4504 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
HY57V561620CLT-K芯片相关品牌
HY57V561620CLT-K规格书下载地址
HY57V561620CLT-K参数引脚图相关
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HY57V561620CLT-K数据表相关新闻
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2019-2-25
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