位置：首页 > IC中文资料第9490页 > HY57V561620CLTP-P
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620CLTP-P | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620CLTP-P产品属性
- 类型
描述
- 型号
HY57V561620CLTP-P
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HY |
24+ |
NA/ |
3278 |
原装现货,当天可交货,原型号开票 |
|||
HYNIX |
24+/25+ |
192 |
原装正品现货库存价优 |
||||
HY |
14+ |
TSOP54 |
28 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
24+ |
TSSOP54 |
100 |
大批量供应优势库存热卖 |
|||
HYNIX |
2015+ |
SOP/DIP |
19889 |
一级代理原装现货,特价热卖! |
|||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
HY |
06+ |
TSOP |
1000 |
自己公司全新库存绝对有货 |
|||
HYNIX |
2025+ |
TSOP |
3615 |
全新原厂原装产品、公司现货销售 |
|||
HY |
638 |
原装正品 |
|||||
HY |
23+ |
TSSOP |
7000 |
绝对全新原装!现货!特价!请放心订购! |
HY57V561620CLTP-P芯片相关品牌
HY57V561620CLTP-P规格书下载地址
HY57V561620CLTP-P参数引脚图相关
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- HY57V561620CLTP-8
- HY57V561620CLTP-7
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- HY57V561620CLT-P
- HY57V561620CLT-K
- HY57V561620CLT-H
- HY57V561620CLT-8
- HY57V561620CLT-7
- HY57V561620CLT-6
- HY57V561620CLT
- HY57V561620C
- HY57V561620BT-SI
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HY57V561620CLTP-P数据表相关新闻
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2019-2-25
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