型号 功能描述 生产厂家&企业 LOGO 操作
HY57V561620B

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4Banks x 4M x 16Bit Synchronous DRAM

The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

4 Banks x 4M x 16Bit Synchronous DRAM

DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a

Hynix

海力士

HY57V561620B产品属性

  • 类型

    描述

  • 型号

    HY57V561620B

  • 制造商

    HYNIX

  • 制造商全称

    Hynix Semiconductor

  • 功能描述

    4 Banks x 4M x 16Bit Synchronous DRAM

更新时间:2025-8-7 12:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
HYNIX
18+
TSOP-54
85600
保证进口原装可开17%增值税发票
HYNIX
24+
TSOP54
2650
原装优势!绝对公司现货
HYNIX
23+
TSSOP54
50000
只做原装正品
HYNIX/海力士
22+
TSOP
12245
现货,原厂原装假一罚十!
HYNIX
24+
TSOP-54
4650
TSOP-54
21+
HYNIX
12588
原装正品,自己库存 假一罚十
HYNIX
25+23+
TSSOP
39195
绝对原装正品全新进口深圳现货
HYNIX/海力士
23+
TSOP
3925
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、
HY
23+
NA
12000
全新原装假一赔十
HY
TSOP
68500
一级代理 原装正品假一罚十价格优势长期供货

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