位置：首页 > IC中文资料第5903页 > HY57V561620CLT-H
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
HY57V561620CLT-H | 4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620C is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620C is organized as 4banks of 4,194,304x16. HY57V561620C is offering fully synchronous operation referenced to a | Hynix 海力士 |   | |
4Banks x 4M x 16Bit Synchronous DRAM The HY57V561620T is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620 is organized as 4 banks of 4,194,304x16. The HY57V561620T is offering fully synchronous operation referenced to a po | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | | ||
4 Banks x 4M x 16Bit Synchronous DRAM DESCRIPTION The HY57V561620B is a 268,435,456bit CMOS Synchronous DRAM, ideally suited for the main memory applications which require large memory density and high bandwidth. HY57V561620B is organized as 4banks of 4,194,304x16. HY57V561620B is offering fully synchronous operation referenced to a | Hynix 海力士 | |
HY57V561620CLT-H产品属性
- 类型
描述
- 型号
HY57V561620CLT-H
- 制造商
HYNIX
- 制造商全称
Hynix Semiconductor
- 功能描述
4 Banks x 4M x 16Bit Synchronous DRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
HYNIX |
6200 |
TSOP |
17 |
100%原装正品现货 |
|||
TSOP54 |
25+ |
HY |
12588 |
原装正品,自己库存 假一罚十 |
|||
hy |
23+ |
tssop |
5000 |
原装正品,假一罚十 |
|||
HY |
2447 |
TSOP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
HYUNDAI |
24+ |
TSOP |
8 |
||||
HY |
24+ |
SMD |
20000 |
一级代理原装现货假一罚十 |
|||
HY |
20+ |
TSSOP56 |
35830 |
原装优势主营型号-可开原型号增税票 |
|||
HYNIX |
0928+ |
TSOP54 |
17 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
HY |
24+ |
TSOP |
6980 |
原装现货,可开13%税票 |
|||
HYNIX |
2021+ |
BGA |
6800 |
原厂原装,欢迎咨询 |
HY57V561620CLT-H芯片相关品牌
HY57V561620CLT-H规格书下载地址
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HY57V561620CLT-H数据表相关新闻
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2019-2-25
DdatasheetPDF页码索引
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