IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 3rd generation IGBTs offer superior conduction and switching performance and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction hea

IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

IGBT - Field Stop, Trench 650 V, 40 A

Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 4th generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features • Max Juncti

Field-Stop Trench IGBT

DESCRIPTION · High Input Impedance · High Current Capabilityt · Low Saturation Voltage: VCE(sat) = 1.65 V(Typ.) @ IC = 40 A APPLICATIONS ·Solar Inverter, UPS, Welder, Digital Power Generator ·Telecom, ESS

IGBT - Field Stop, Trench 650 V, 40 A

文件：480.04 Kbytes Page：8 Pages

IGBT - Field Stop, Trench 650 V, 40 A

文件：1.27362 Mbytes Page：9 Pages

IGBT - Field Stop, Trench 650 V, 40 A

文件：1.27362 Mbytes Page：9 Pages

封装/外壳：TO-247-3 包装：管件 描述：IGBT FIELD STOP 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：管件 描述：IGBT 650V 80A 268W TO-247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT - Field Stop, Trench 650 V, 40 A

文件：480.04 Kbytes Page：8 Pages

IGBT - Field Stop, Trench 650 V, 40 A

文件：585.45 Kbytes Page：9 Pages

IGBT - Field Stop, Trench 650 V, 40 A

文件：585.45 Kbytes Page：9 Pages

650 V, 40 A Field Stop Trench IGBT

文件：937.77 Kbytes Page：11 Pages

650 V, 40 A Field Stop Trench IGBT

文件：308.16 Kbytes Page：10 Pages

Field Stop Trench IGBT

文件：1.22822 Mbytes Page：11 Pages

IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

IGBT for Automotive Application 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

650V Field Stop IGBT

文件：1.88982 Mbytes Page：8 Pages

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes Page：9 Pages