IGBT - Field Stop, Trench 650 V, 40 A

文件：585.45 Kbytes Page：9 Pages

IGBT，650V，40A，场截止沟槽

封装/外壳：TO-247-3 包装：管件 描述：IGBT NPT 650V 80A TO247-3 分立半导体产品 晶体管 - UGBT、MOSFET - 单

封装/外壳：TO-247-3 包装：散装 描述：IGBT 650V 80A 267W TO-247 分立半导体产品 晶体管 - UGBT、MOSFET - 单

IGBT - Field Stop, Trench 650 V, 40 A

文件：585.45 Kbytes Page：9 Pages

IGBT for Automotive Applications 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

Features  Maximum Junction Temperature: TJ = 175C  High Speed Switching Series  VCE(sat) = 1.6 V (Typ.) @ IC = 40 A  100% of the Part are Dynamically Tested (Note 1)  AEC−Q101 Qualified  These Devices are Pb−Free and are RoHS Compliant Typical Applications  Automotive On Board

IGBT for Automotive Application 650 V, 40 A

Using novel field stop IGBT technology, onsemi’s new series of FS4 IGBTs offer the optimum performance for automotive applications. This technology is Short circuit rated and offers high figure of merit with low conduction and switching losses. Features • Maximum Junction Temperature: TJ = 17

650V Field Stop IGBT

文件：1.88982 Mbytes Page：8 Pages

IGBT for Automotive Applications, 650 V, 40 A, D2PAK

文件：271.44 Kbytes Page：9 Pages