Description

Using novel field stop IGBT technology, ON Semiconductor’s new

series of field stop 3rd generation IGBTs offer superior conduction

and switching performance and easy parallel operation. This device

is well suited for the resonant or soft switching application such as

induction heating and MWO.

Features

• Maximum Junction Temperature: TJ = 175°C

• Positive Temperature Co−efficient for Easy Parallel Operating

• High Current Capability

• Low Saturation Voltage: VCE(sat) = 1.45 V(Typ.) @ IC = 40 A

• 100 of the Parts Tested for ILM (Note 1)

• High Input Impedance

• Fast Switching

• Tighten Parameter Distribution

• This Device is Pb−Free and is RoHS Compliant

Applications

• Induction Heating, MWO