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位置：首页 > IC中文资料第9591页 > DMN5L06

DMN5L06价格

参考价格：￥0.7605

型号：DMN5L06DMK-7 品牌：Diodes 备注：这里有DMN5L06多少钱，2025年最近7天走势，今日出价，今日竞价，DMN5L06批发/采购报价，DMN5L06行情走势销售排行榜，DMN5L06报价。

型号	功能描述	生产厂家企业	LOGO
DMN5L06	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06-7	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06DMK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device	DIODES 美台半导体	DIODES
DMN5L06DMK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device	DIODES 美台半导体	DIODES
DMN5L06DMKQ	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi	DIODES 美台半导体	DIODES
DMN5L06DMKQ-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi	DIODES 美台半导体	DIODES
DMN5L06DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06DW-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1	DIODES 美台半导体	DIODES
DMN5L06DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1	DIODES 美台半导体	DIODES
DMN5L06K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat	DIODES 美台半导体	DIODES
DMN5L06K	N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Features and Benefits  Low On-Re	DIODES 美台半导体	DIODES
DMN5L06K-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat	DIODES 美台半导体	DIODES
DMN5L06T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06T-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability	DIODES 美台半导体	DIODES
DMN5L06TK-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability	DIODES 美台半导体	DIODES
DMN5L06V	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06V-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06VA	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06VA-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06VAK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-13A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-7A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-13A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-7A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06W	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06W-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06WK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3	DIODES 美台半导体	DIODES
DMN5L06WK-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3	DIODES 美台半导体	DIODES
DMN5L06DMK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK_0709	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK_15	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMKQ	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES 美台半导体	DIODES
DMN5L06DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK_0711	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK_15	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：241.48 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK_17	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06K	N-CHANNEL ENHANCEMENT MODE MOSFET 文件：175.85 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06K_09	N-CHANNEL ENHANCEMENT MODE MOSFET 文件：175.85 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06K_15	null 文件：265.84 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06K-7	null 文件：265.84 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06K-7	N-CHANNEL ENHANCEMENT MODE MOSFET 文件：175.85 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06KQ-7	null 文件：265.84 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：182.51 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06TK_15	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：182.51 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06VAK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：278.29 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES

DMN5L06产品属性

类型
描述
型号
DMN5L06
制造商
DIODES
制造商全称
Diodes Incorporated
功能描述
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DMN5L06供应商更多...

更新时间：2025-9-29 22:58:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市凌旭科技有限公司	DMN5L06DMK-7	DIODES	2016+	SOT26	6000	只做原装,假一罚十,公司可开17%增值税发票!	询价
深圳市科芯源微电子有限公司	DMN5L06-7-F	VB	25+	SOT-23	10000	原装正品,假一罚十!	询价
深圳市恒达亿科技有限公司	DMN5L06DWK-7	DIODES	25+	SOT363	6000	全新原装现货、诚信经营!	询价
中天科工半导体（深圳）有限公司	DMN5L06TK-7	DIODES/美台	25+	SOT-523	38122	DIODES/美台全新特价DMN5L06TK-7即刻询购立享优惠#长期有货	询价
深圳市润联芯城科技有限公司	DMN5L06-7-F	DIODES/美台	23+	SOT-323	50000	原装正品支持实单	询价
深圳市讯顺达科技有限公司	DMN5L06K-7	DIODES	21+	SOT-23-3	6000	全新原装公司现货	询价
深圳市富利微电子科技有限公司	DMN5L06DMK-7	DIODES/美台	24+	SOT-26	25000	原装正品公司现货,假一赔十!	询价
深圳市益百分电子有限公司	DMN5L06VK-7MOS	DIODES/美台	19+	NA	15000		询价
深圳市科恒伟业电子有限公司	DMN5L06-7	DIODES/美台	2450+	SOT-23-3	9850	只做原厂原装正品现货或订货假一赔十!	询价
深圳市富芯乐电子科技有限公司	DMN5L06K-7	DIODES/美台	24+	SOT-23	2000	全新原装现货特价销售,欢迎来电查询	询价

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DdatasheetPDF页码索引

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DMN5L06价格

DMN5L06产品属性

DMN5L06供应商更多...

DMN5L06芯片相关品牌

DMN5L06规格书下载地址

DMN5L06参数引脚图相关

DMN5L06数据表相关新闻

DMN4468LSS资料规格参数

DMN601K-7

DMN601DWK-7

DMN5L06DWK-7

DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，

DMN4031SSD-13

DdatasheetPDF页码索引