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DMN5L06价格
参考价格：￥0.7605
型号：DMN5L06DMK-7 品牌：Diodes 备注：这里有DMN5L06多少钱，2025年最近7天走势，今日出价，今日竞价，DMN5L06批发/采购报价，DMN5L06行情走势销售排行榜，DMN5L06报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN5L06 | SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated |  |   |
SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1 | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1 | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits LowOn-Re | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3 | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3 | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：530.21 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：241.48 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：530.21 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：530.21 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：175.85 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：175.85 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
null 文件：265.84 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
null 文件：265.84 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：175.85 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | | |
null 文件：265.84 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：182.51 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：182.51 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：174.57 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | |
DMN5L06产品属性
- 类型
描述
- 型号
DMN5L06
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES |
2016+ |
SOT26 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
19+ |
NA |
15000 |
||||
DIODES/美台 |
24+ |
SOT-23 |
2000 |
全新原装现货特价销售,欢迎来电查询 |
|||
Diodes |
21+ |
TO2363 SC59 SOT233 |
13880 |
公司只售原装,支持实单 |
|||
Diodes(美台) |
23+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
VB |
25+ |
SOT-23 |
10000 |
原装正品,假一罚十! |
|||
DIODES/美台 |
23+ |
SOT23-3 |
25000 |
全新原装现货,假一赔十 |
|||
DIODES |
23+ |
SOT23 |
63000 |
原装正品现货 |
|||
DIODES/美台 |
24+ |
SOT-563 |
45000 |
热卖优势现货 |
|||
DIODES/美台 |
25+ |
SOT563 |
918000 |
明嘉莱只做原装正品现货 |
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DMN5L06数据表相关新闻
DMN601K-7
DMN601K-7
2022-8-2DMN601DWK-7
DMN601DWK-7
2021-11-30DMN5L06DWK-7
DMN5L06DWK-7
2021-11-29DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
DMN2075U-7，DIODES(美台)，SOT-23，45K，21+，
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DMN4031SSD-13
2021-10-19DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
DMN2046U-7SOT-23SOT233.4A20V热卖产品质量保证
2019-3-18
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