DMN5L06价格

参考价格:¥0.7605

型号:DMN5L06DMK-7 品牌:Diodes 备注:这里有DMN5L06多少钱,2024年最近7天走势,今日出价,今日竞价,DMN5L06批发/采购报价,DMN5L06行情走势销售排行榜,DMN5L06报价。
型号 功能描述 生产厂家&企业 LOGO 操作
DMN5L06

SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

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DIODES

SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice

DIODESDiodes Incorporated

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DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi

DIODESDiodes Incorporated

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DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits LowOn-Re

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3)

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3

DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

Features •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3

DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

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达尔科技

DIODES

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DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

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DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR

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DIODESDiodes Incorporated

达尔科技

DIODES

DUALN-CHANNELENHANCEMENTMODEMOSFET

文件:278.29 Kbytes Page:6 Pages

DIODESDiodes Incorporated

达尔科技

DIODES

DMN5L06产品属性

  • 类型

    描述

  • 型号

    DMN5L06

  • 制造商

    DIODES

  • 制造商全称

    Diodes Incorporated

  • 功能描述

    SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

更新时间:2024-5-7 13:10:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES/美台
21+
SOT523
6000
原装正品,低价热卖!~24小时欢迎来电咨询,李先生13751179224!
DIODES/美台
23+
SOT563
918000
明嘉莱只做原装正品现货
DIODES/美台
21+
SOT523
1725
支持实单 申请价更优 18922892780
23+
SOT523
700000
公主请下单 柒号只做原装
DIODES
23+
310268
全新原装,有询必回
DIODES/美台
SOT-363
21+
600000
航宇科工半导体-中国航天科工集团战略合作伙伴!
21+
QFP
80000
优势代理渠道,原装正品,可全系列订货开增值税票
原厂原包
2022+
原装
38560
原装进口现货,工厂客户可以放款。17377264928微信同
DIODES
1312+
SOT-23-3
8079
只做原装正品
DIODES/美台
23+
SOT-23
2000
全新原装现货特价销售,欢迎来电查询

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  • SCHNEIDER
  • SECOS
  • TI
  • YAGEO

DMN5L06数据表相关新闻