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位置：首页 > IC中文资料 > DMN5L06

DMN5L06价格

参考价格：￥0.7605

型号：DMN5L06DMK-7 品牌：Diodes 备注：这里有DMN5L06多少钱，2026年最近7天走势，今日出价，今日竞价，DMN5L06批发/采购报价，DMN5L06行情走势销售排行榜，DMN5L06报价。

型号	功能描述	生产厂家企业	LOGO
DMN5L06	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06-7	SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06DMK	丝印代码：DAB；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device	DIODES 美台半导体	DIODES
DMN5L06DMK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device	DIODES 美台半导体	DIODES
DMN5L06DMKQ	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi	DIODES 美台半导体	DIODES
DMN5L06DMKQ	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state\nresistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nVery Low Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nESD Protected up to 2kV;	DIODES 美台半导体	DIODES
DMN5L06DMKQ-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi	DIODES 美台半导体	DIODES
DMN5L06DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06DW-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1	DIODES 美台半导体	DIODES
DMN5L06DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1	DIODES 美台半导体	DIODES
DMN5L06K	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat	DIODES 美台半导体	DIODES
DMN5L06K	N-CHANNEL ENHANCEMENT MODE MOSFET Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. Features and Benefits  Low On-Re	DIODES 美台半导体	DIODES
DMN5L06K-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This new generation 50V N-Channel Enhancement Mode MOSFET has been designed to minimize RDS(on) and yet maintain superior switching performance. This device is ideal for use in Notebook battery power management and Load switch. • Load switches • Level switches Feat	DIODES 美台半导体	DIODES
DMN5L06T	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06T-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability	DIODES 美台半导体	DIODES
DMN5L06TK-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected Up To 2kV • Green Device (Note 3) • Qualified to AEC-Q101 standards for High Reliability	DIODES 美台半导体	DIODES
DMN5L06V	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06V-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06VA	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06VA-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06VAK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-13A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VAK-7A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-13A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06VK-7A	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant	DIODES 美台半导体	DIODES
DMN5L06W	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06W-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)	DIODES 美台半导体	DIODES
DMN5L06WK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3	DIODES 美台半导体	DIODES
DMN5L06WK-7	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • ESD Protected Up To 2kV • Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) • Halogen and Antimony Free. “Green” Device (Note 3	DIODES 美台半导体	DIODES
DMN5L06DMK	丝印代码：DAB；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK_0709	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK_15	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DMK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DW	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK_0711	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK_15	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：241.48 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK_17	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06DWK-7	DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06K	N-CHANNEL ENHANCEMENT MODE MOSFET 文件：175.85 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06K_09	N-CHANNEL ENHANCEMENT MODE MOSFET 文件：175.85 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06K_15	null 文件：265.84 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06K-7	null 文件：265.84 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06K-7	N-CHANNEL ENHANCEMENT MODE MOSFET 文件：175.85 Kbytes Page：4 Pages	DIODES 美台半导体	DIODES
DMN5L06KQ-7	null 文件：265.84 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06TK	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：182.51 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06TK_15	N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：182.51 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES
DMN5L06VAK-13	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：278.29 Kbytes Page：6 Pages	DIODES 美台半导体	DIODES

DMN5L06产品属性

类型
描述
Automotive Compliant PPAP：
DMN5L06DMKQ
Polarity：
N+N
ESD Diodes：
Yes
VDS：
50 V
VGS：
20 ±V
IDS @ TA = +25°C：
0.305 A
PD @ TA = +25°C：
0.4 W
RDS(ON) Max @ VGS (10V)：
N/A mΩ
RDS(ON) Max @ VGS (4.5V)：
2000 mΩ
RDS(ON) Max @ VGS (2.5V)：
2500 mΩ
RDS(ON) Max @ VGS (1.8V)：
3000 mΩ
VGS (th) Max：
1 V
QG Typ @ VGS = 4.5V (nC)：
N/A nC
QG Typ @ VGS = 10V (nC)：
N/A nC
Packages：
SOT26 (SC74R)

DMN5L06供应商更多...

更新时间：2026-8-1 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市高捷芯城科技有限公司	DMN5L06K-7	Diodes(美台)	26+	SOT-23	10548	原厂订货渠道,支持账期,一站式服务!	询价
深圳市明嘉莱科技有限公司	DMN5L06VK-7	DIODES/美台	25+	SOT563	918000	明嘉莱只做原装正品现货	询价
深圳市恒达亿科技有限公司	DMN5L06DWK-7	DIODES	25+	SOT363	6000	全新原装现货、诚信经营!	询价
深圳市向鸿伟业电子有限公司	DMN5L06TK-7	DIODES/美台	21+	SOT523	6000	原装正品,低价热卖!~24小时欢迎来电咨询,李先生13751179224!	询价
深圳市米数科技有限公司	DMN5L06DWK-7	DIODES	25+	SOT-363-6	12880	原装,诚信经营	询价
深圳市正迈科技有限公司	DMN5L06TK-7	DIODES	26+	3PINSOTSMD	150000	DMN5L06TK-7 MOSFET N-CH 50V 0.28A 3-Pin 280MA 现货供应优势	询价
深圳市金华微盛电子有限公司	DMN5L06DMK-7	DIODES/美台	2019+	SOT26	78550	原厂渠道可含税出货	询价
深圳市勤思达科技有限公司	DMN5L06WK-7	DIODES(美台)		SOT-323	4547	全新原装正品现货可开票	询价
深圳市芯皇电子有限公司	DMN5L06DWK-7	DIODES/美台	SOT-363	23+	6000	专业配单原装正品假一罚十	询价
深圳诚思涵科技有限公司	DMN5L06DMK-7	DIODES	16+	SOT-26	3000	进口原装现货/价格优势!	询价

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DdatasheetPDF页码索引

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找IC，尽在114IC

DMN5L06价格

DMN5L06产品属性

DMN5L06供应商更多...

DMN5L06芯片相关品牌

DMN5L06规格书下载地址

DMN5L06参数引脚图相关

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DMN4468LSS资料规格参数

DMN601K-7

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DMN5L06DWK-7

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DMN4031SSD-13

DdatasheetPDF页码索引