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DMN5L06价格
参考价格：￥0.7605
型号：DMN5L06DMK-7 品牌：Diodes 备注：这里有DMN5L06多少钱，2025年最近7天走势，今日出价，今日竞价，DMN5L06批发/采购报价，DMN5L06行情走势销售排行榜，DMN5L06报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN5L06 | SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 |  |   |
SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1 | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance(1.0VMax) •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •ESDProtectedupto2kV •TotallyLead-Free&FullyRoHSCompliant(Notes1 | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFET hasbeendesignedtominimizeRDS(on)andyetmaintainsuperior switchingperformance.ThisdeviceisidealforuseinNotebook batterypowermanagementandLoadswitch. FeaturesandBenefits LowOn-Re | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications Thisnewgeneration50VN-ChannelEnhancementModeMOSFEThasbeendesignedtominimizeRDS(on)andyetmaintainsuperiorswitchingperformance.ThisdeviceisidealforuseinNotebookbatterypowermanagementandLoadswitch. •Loadswitches •Levelswitches Feat | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedUpTo2kV •GreenDevice(Note3) •QualifiedtoAEC-Q101standardsforHighReliability | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •N-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3 | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •ESDProtectedUpTo2kV •TotallyLead-Free&FullyRoHScompliant(Notes1&2) •HalogenandAntimonyFree.“Green”Device(Note3 | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：530.21 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：241.48 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：530.21 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：530.21 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：175.85 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：175.85 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
null 文件：265.84 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
null 文件：265.84 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEMOSFET 文件：175.85 Kbytes Page：4 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
null 文件：265.84 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：182.51 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
N-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：182.51 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：174.57 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODESDiodes Incorporated 美台半导体 | | |
DMN5L06产品属性
- 类型
描述
- 型号
DMN5L06
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
25+ |
SOT563 |
918000 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
23+/24+ |
SOT-563 |
9865 |
低压MOS管主营品牌,原装正品 |
|||
DIODES/美台 |
21+ |
SOT523 |
6000 |
原装正品,低价热卖!~24小时欢迎来电咨询,李先生13751179224! |
|||
Diodes(美台) |
24+ |
SOT-23(SOT-23-3) |
7247 |
原厂可订货,技术支持,直接渠道。可签保供合同 |
|||
DIODES |
23+ |
3PINSOTSMD |
150000 |
DMN5L06TK-7 MOSFET N-CH 50V 0.28A 3-Pin 280MA 现货供应优势 |
|||
DIODES(美台) |
24+ |
SOT-323(SC-70) |
9908 |
支持大陆交货,美金交易。原装现货库存。 |
|||
DIODES |
25+ |
SOT363 |
6000 |
全新原装现货、诚信经营! |
|||
DIODES/美台 |
25+ |
SOT-523 |
38122 |
DIODES/美台全新特价DMN5L06TK-7即刻询购立享优惠#长期有货 |
|||
DIODES/美台 |
24+ |
SOT563 |
23000 |
只做正品原装现货 |
|||
DIODES/美台 |
23+ |
SOT26 |
6000 |
原装正品假一罚百!可开增票! |
DMN5L06芯片相关品牌
DMN5L06规格书下载地址
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DMN5L06数据表相关新闻
DMN4468LSS资料规格参数
DMN4468LSS
2025-7-30DMN601K-7
DMN601K-7
2022-8-2DMN601DWK-7
DMN601DWK-7
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DMN5L06DWK-7
2021-11-29DMN2075U-7，DIODES(美台)，SOT-23 ，45K，21+，
DMN2075U-7，DIODES(美台)，SOT-23，45K，21+，
2021-11-10DMN4031SSD-13
DMN4031SSD-13
2021-10-19
DdatasheetPDF页码索引
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- P99
- P100
- P101
- P102
- P103
