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DMN5L06DW价格

参考价格:¥0.4550

型号:DMN5L06DWK-7 品牌:Diodes 备注:这里有DMN5L06DW多少钱,2026年最近7天走势,今日出价,今日竞价,DMN5L06DW批发/采购报价,DMN5L06DW行情走势销售排行榜,DMN5L06DW报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN5L06DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DMN5L06DW

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:373.61 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:530.21 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:373.61 Kbytes Page:4 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:241.48 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:530.21 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:530.21 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:373.61 Kbytes Page:4 Pages

DIODES

美台半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact

STMICROELECTRONICS

意法半导体

DMN5L06DW产品属性

  • 类型

    描述

  • AutomotiveCompliantPPAP:

    OnRequest*

  • Polarity:

    N+N

  • ESDDiodes:

    Yes

  • VDS:

    50V

  • VGS:

    20±V

  • IDS@TA=+25°C:

    0.305A

  • PD@TA=+25°C:

    0.25W

  • RDS(ON)Max@VGS(10V):

    N/AmΩ

  • RDS(ON)Max@VGS(4.5V):

    N/AmΩ

  • RDS(ON)Max@VGS(2.5V):

    5000mΩ

  • RDS(ON)Max@VGS(1.8V):

    N/AmΩ

  • VGS(th)Max:

    1V

  • QGTyp@VGS=4.5V(nC):

    N/AnC

  • QGTyp@VGS=10V(nC):

    N/AnC

更新时间:2026-8-1 23:01:00
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ON/DIODES/PANJIT
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