DMN5L06DW价格
参考价格：￥0.4550
型号：DMN5L06DWK-7 品牌：Diodes 备注：这里有DMN5L06DW多少钱，2026年最近7天走势，今日出价，今日竞价，DMN5L06DW批发/采购报价，DMN5L06DW行情走势销售排行榜，DMN5L06DW报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN5L06DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) | DIODES 美台半导体 |   | |
DMN5L06DW | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR | DIODES 美台半导体 | | |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance (1.0V Max) • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • ESD Protected up to 2kV • Totally Lead-Free & Fully RoHS Compliant (Notes 1 | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：241.48 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：530.21 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：373.61 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact | STMICROELECTRONICS 意法半导体 | |
DMN5L06DW产品属性
- 类型
描述
- AutomotiveCompliantPPAP：
OnRequest*
- Polarity：
N+N
- ESDDiodes：
Yes
- VDS：
50V
- VGS：
20±V
- IDS@TA=+25°C：
0.305A
- PD@TA=+25°C：
0.25W
- RDS(ON)Max@VGS(10V)：
N/AmΩ
- RDS(ON)Max@VGS(4.5V)：
N/AmΩ
- RDS(ON)Max@VGS(2.5V)：
5000mΩ
- RDS(ON)Max@VGS(1.8V)：
N/AmΩ
- VGS(th)Max：
1V
- QGTyp@VGS=4.5V(nC)：
N/AnC
- QGTyp@VGS=10V(nC)：
N/AnC
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES(美台) |
25+ |
X2-TSN1820-10 |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES/美台 |
19+ |
NA |
1110 |
||||
DIODES |
20+ |
SC59 |
36800 |
原装优势主营型号-可开原型号增税票 |
|||
DIODES |
25+ |
X2-TSN1820 |
18000 |
一手货源诚信靠谱现货 |
|||
DIODES达尔 |
20+ |
- |
880000 |
明嘉莱只做原装正品现货 |
|||
DIODES |
26+ |
X2-TSN1820 |
28000 |
公司只有原装,可以配单 |
|||
Diodes(美台) |
26+23+ |
22548 |
绝对原装正品全新进口深圳现货 |
||||
DIODES |
25+ |
SOT-363-6 |
12880 |
原装,诚信经营 |
|||
ON/DIODES/PANJIT |
24+ |
SC59 |
43000 |
||||
DIODES/美台 |
26+ |
SC59 |
5000 |
原厂渠道 可含税出货，支持一站式配单 |
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DdatasheetPDF页码索引
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