DMN5L06DMK价格
参考价格：￥0.7605
型号：DMN5L06DMK-7 品牌：Diodes 备注：这里有DMN5L06DMK多少钱，2026年最近7天走势，今日出价，今日竞价，DMN5L06DMK批发/采购报价，DMN5L06DMK行情走势销售排行榜，DMN5L06DMK报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN5L06DMK | 丝印代码：DAB；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device | DIODES 美台半导体 |   | |
DMN5L06DMK | 丝印代码：DAB；DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES 美台半导体 | | |
DMN5L06DMK | DUAL N-CHANNEL ENHANCEMENT MODE MOSFET | DIODES 美台半导体 | | |
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET This MOSFET has been designed to minimize the on-state\nresistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Low On-Resistance\nVery Low Gate Threshold Voltage\nLow Input Capacitance\nFast Switching Speed\nLow Input/Output Leakage\nESD Protected up to 2kV; | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES 美台半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an | STMICROELECTRONICS 意法半导体 | | ||
TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact | STMICROELECTRONICS 意法半导体 | |
DMN5L06DMK产品属性
- 类型
描述
- Automotive Compliant PPAP：
DMN5L06DMKQ
- Polarity：
N+N
- ESD Diodes：
Yes
- VDS：
50 V
- VGS：
20 ±V
- IDS @ TA = +25°C：
0.305 A
- PD @ TA = +25°C：
0.4 W
- RDS(ON) Max @ VGS (10V)：
N/A mΩ
- RDS(ON) Max @ VGS (4.5V)：
2000 mΩ
- RDS(ON) Max @ VGS (2.5V)：
2500 mΩ
- RDS(ON) Max @ VGS (1.8V)：
3000 mΩ
- VGS (th) Max：
1 V
- QG Typ @ VGS = 4.5V (nC)：
N/A nC
- QG Typ @ VGS = 10V (nC)：
N/A nC
- Packages：
SOT26 (SC74R)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES INC. |
25+ |
N/A |
6895 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
|||
DIODES |
2016+ |
SOT26 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
1538+ |
SOT23-6 |
280 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
Diodes(美台) |
26+ |
NA |
20094 |
正纳10年以上分销经验原装进口正品做服务做口碑有支持 |
|||
DIODES/美台 |
26+ |
SOT-26 |
25000 |
原装正品公司现货,假一赔十! |
|||
DIODES |
25+23+ |
SOT23-6 |
12855 |
绝对原装正品全新进口深圳现货 |
|||
DIODES |
24+ |
SMD |
5500 |
长期供应原装现货实单可谈 |
|||
DIODES/美台 |
21+ |
SOT-26 |
8080 |
只做原装,质量保证 |
|||
Diodes |
24+ |
SOT-26 |
7500 |
||||
DIODES |
24+ |
SOT236 |
21816 |
正规渠道,免费送样。支持账期,BOM一站式配齐 |
DMN5L06DMK规格书下载地址
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DdatasheetPDF页码索引
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