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DMN5L06V价格

参考价格:¥0.4948

型号:DMN5L06VAK-7 品牌:Diodes 备注:这里有DMN5L06V多少钱,2026年最近7天走势,今日出价,今日竞价,DMN5L06V批发/采购报价,DMN5L06V行情走势销售排行榜,DMN5L06V报价。
型号 功能描述 生产厂家 企业 LOGO 操作
DMN5L06V

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3)

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. •Low On-Resistance\n•Low Input Capacitance\n•Low Input/Output Leakage\n•ESD Protected up to 2kV\n•Halogen and Antimony Free. “Green” Device (Note 3)\n•The DMN5L06VKQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, and manufactu;

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:278.29 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:278.29 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:174.57 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:278.29 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

文件:278.29 Kbytes Page:6 Pages

DIODES

美台半导体

DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

文件:174.57 Kbytes Page:6 Pages

DIODES

美台半导体

包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:MOSFET N-CH SOT23 分立半导体产品 晶体管 - FET,MOSFET - 阵列

DIODES

美台半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

Description The STTH5L06, which uses ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power factor corrections. This device, available in TO-220AC, TO-220FPAC DPAK and DO-201AD, is also intended for use as a free wheeling diode in power supplies an

STMICROELECTRONICS

意法半导体

TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER

FEATURES AND BENEFITS ■ Ultrafast switching ■ Low reverse recovery current ■ Reduces switching & conduction losses ■ Low thermal resistance DESCRIPTION The STTH5L06, which is using ST Turbo 2 600V technology, is specially suited as boost diode in discontinuous or critical mode power fact

STMICROELECTRONICS

意法半导体

DMN5L06V产品属性

  • 类型

    描述

  • Automotive Compliant PPAP:

    On Request*

  • Polarity:

    N+N

  • ESD Diodes:

    Yes

  • VDS:

    50 V

  • VGS:

    20 ±V

  • IDS @ TA = +25°C:

    0.28 A

  • PD @ TA = +25°C:

    0.25 W

  • RDS(ON) Max @ VGS (10V):

    N/A mΩ

  • RDS(ON) Max @ VGS (4.5V):

    N/A mΩ

  • RDS(ON) Max @ VGS (2.5V):

    5000 mΩ

  • RDS(ON) Max @ VGS (1.8V):

    N/A mΩ

  • VGS (th) Max:

    1 V

  • QG Typ @ VGS = 4.5V (nC):

    N/A nC

  • QG Typ @ VGS = 10V (nC):

    N/A nC

  • Packages:

    SOT563

更新时间:2026-8-4 17:16:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
DIODES
25+
X2-TSN1820
20000
原装
DIODES/美台
26+
X4-DSN3118-6
25000
原装正品公司现货,假一赔十!
DIODES/美台
25+
SOT563
918000
明嘉莱只做原装正品现货
DIODES
24+
X2-TSN1820
8000
新到现货,只做全新原装正品
DIODES/美台
21+
X4-DSN3118-6
8080
只做原装,质量保证
DIODES
25+
X2-TSN1820
10000
原装正品,支持实单,可配单
ON/DIODES/PANJIT
24+
SC59
43000
DIODES
24+
X2-TSN1820
8000
原厂原装,价格优势,欢迎洽谈!
DIODES
24+
X2-TSN1820
5000
全新原装正品,现货销售
DIODES/美台
23+
NA
12730
原装正品代理渠道价格优势

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