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DMN5L06VA价格
参考价格：￥0.4948
型号：DMN5L06VAK-7 品牌：Diodes 备注：这里有DMN5L06VA多少钱，2025年最近7天走势，今日出价，今日竞价，DMN5L06VA批发/采购报价，DMN5L06VA行情走势销售排行榜，DMN5L06VA报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN5L06VA | DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) | DIODES 美台半导体 |   | |
SINGLE N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Single N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage, 1.0V Max • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halogen and Ant | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：174.57 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage (1.0V max) • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • ESD Protected up to 2kV • Green Device | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Description and Applications This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • General Purpose Interfacing Switch • Power Management Functions Features • Low On-Resi | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • Dual N-Channel MOSFET • Low On-Resistance • Very Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Ultra-Small Surface Mount Package • Lead Free By Design/RoHS Compliant (Note 2) • “Green” Device (Note 3) | DIODES 美台半导体 | | ||
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES 美台半导体 | |
DMN5L06VA产品属性
- 类型
描述
- 型号
DMN5L06VA
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
DIODES |
2016+ |
SOT363 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
23+ |
SOT-563 |
12700 |
买原装认准中赛美 |
|||
DIODES/美台 |
25+ |
SOT563 |
160021 |
明嘉莱只做原装正品现货 |
|||
DIODES/美台 |
22+ |
SOT |
100000 |
代理渠道/只做原装/可含税 |
|||
DIODES/美台 |
25+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
|||
DIODES/美台 |
25+ |
SOT-563 |
32360 |
DIODES/美台全新特价DMN5L06VAK即刻询购立享优惠#长期有货 |
|||
DIODES(美台) |
2024+ |
SOT-563-6 |
500000 |
诚信服务,绝对原装原盘 |
|||
DIODES |
0737+ |
SOT-563-6 |
159 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES |
23+ |
SOT563 |
15000 |
公司只做原装现货库存! |
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