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DMN5L06VA价格
参考价格：￥0.4948
型号：DMN5L06VAK-7 品牌：Diodes 备注：这里有DMN5L06VA多少钱，2025年最近7天走势，今日出价，今日竞价，DMN5L06VA批发/采购报价，DMN5L06VA行情走势销售排行榜，DMN5L06VA报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DMN5L06VA | DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated |  |   |
SINGLEN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •SingleN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage,1.0VMax •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •TotallyLead-Free&FullyRoHSCompliant(Notes1&2) •HalogenandAnt | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：174.57 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEMOSFET 文件：278.29 Kbytes Page：6 Pages | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage(1.0Vmax) •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •ESDProtectedupto2kV •GreenDevice | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR DescriptionandApplications ThisMOSFETisdesignedtominimizetheon-stateresistanceandyetmaintainsuperiorswitchingperformance,makingitidealforhighefficiencypowermanagementapplications. •GeneralPurposeInterfacingSwitch •PowerManagementFunctions Features •LowOn-Resi | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR Features •DualN-ChannelMOSFET •LowOn-Resistance •VeryLowGateThresholdVoltage •LowInputCapacitance •FastSwitchingSpeed •LowInput/OutputLeakage •Ultra-SmallSurfaceMountPackage •LeadFreeByDesign/RoHSCompliant(Note2) •“Green”Device(Note3) | DIODES Diodes Incorporated | | | |
DUALN-CHANNELENHANCEMENTMODEFIELDEFFECTTRANSISTOR 文件：276.8 Kbytes Page：4 Pages | DIODES Diodes Incorporated | | |
DMN5L06VA产品属性
- 类型
描述
- 型号
DMN5L06VA
- 制造商
DIODES
- 制造商全称
Diodes Incorporated
- 功能描述
DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DIODES/美台 |
24+ |
NA/ |
6250 |
原装现货,当天可交货,原型号开票 |
|||
DIODES |
2016+ |
SOT363 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
DIODES/美台 |
22+ |
SOT |
100000 |
代理渠道/只做原装/可含税 |
|||
DIODES/美台 |
25+ |
原厂原封可拆样 |
54687 |
百分百原装现货 实单必成 |
|||
DIODES/美台 |
1942+ |
SOT663 |
9852 |
只做原装正品现货或订货!假一赔十! |
|||
DIODES(美台) |
2024+ |
SOT-563-6 |
500000 |
诚信服务,绝对原装原盘 |
|||
DIODES |
0737+ |
SOT-563-6 |
159 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
DIODES美台 |
23+ |
SOT-563 |
22820 |
原装正品，支持实单 |
|||
Diodes Incorporated |
24+ |
SOT-563,SOT-666 |
30000 |
晶体管-分立半导体产品-原装正品 |
|||
原装DIODES |
24+ |
SOT663 |
9000 |
只做原装正品现货 欢迎来电查询15919825718 |
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DMN5L06VA规格书下载地址
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DMN5L06VA数据表相关新闻
DMN601K-7
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